Nitride-based concentrator solar cells grown on Si substrates

Liu, C. Y.; Lai, Chien‐Chih; Liao, J.H.; Cheng, Lung Chieh; Liu, H.H.; Chang, C.C.; Lee, G.Y.; Chyi, Jen‐Inn; Yeh, Li Ko; He, Jr Hau; Chung, Te Yuan; Huang, Li; Lai, K. Robert

doi:10.1016/j.solmat.2013.05.017

Cited by 16 publications

(11 citation statements)

References 29 publications

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“…The less efficiency saturation of the nanoneedle-covered device further pushes the η enhancement to be 45.8% at 100 suns (in comparison with that of the bare device), demonstrating the excellent solar harvesting of the nanoneedles under concentrated illumination. The saturation of η comes from the inevitable junction heating brought by the high solar concentration, which degrades the photovoltaic device via the increased J 0 and the consequent V oc shrinkage1830. Summarily, the evolution of η is dictated by the competition between J sc and J 0 as the concentration ration rises.…”

Section: Resultsmentioning

confidence: 99%

“…The concentrated solar irradiance can easily damage the device by overheating the junctions18. Since the diffuse reflection triggered on the mircostructured or nanostructured surface can trap and redirect the incoming photons, the very high solar irradiance should be more evenly distributed on the device surface, preventing the thermal damage in localized areas.…”

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confidence: 99%

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Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

Yeh

Tian

Lai

et al. 2016

Sci Rep

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GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

Yeh

Tian

Lai

et al. 2016

Sci Rep

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“…Direct transition wide‐band edge InGaN large piezoelectric constant allows controlling surface recombination. Currently, InGaN/Si photocells with different techniques of modelling are found theoretically attractive . In this design process, intense solar irradiance absorbed by the top InGaN cell seems to heat generation prone.…”

Section: Introductionmentioning

confidence: 99%

“…In this design process, intense solar irradiance absorbed by the top InGaN cell seems to heat generation prone. Thermal conduction process is also well recognized by Si wafer . InGaN also shows a better radiation resistance to avoid surface damage in terrestrial and space applications.…”

Section: Introductionmentioning

confidence: 99%

InGaN photocell significant efficiency enhancement on Si - an influence of interlayer physical properties

Ghosh

Zainal

Mohamad

et al. 2016

Int. J. Energy Res.

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Nearly similar molar ratio of in and Ga in indium gallium nitride (InGaN) /Si photocells prefers to match InGaN conduction level energy to Si valance energy band for ohmic contact between two cells. At high temperature fabrication process, InGaN-Si interface shows highly defecting prone. Considering those tussles, InGaN-based/Si-based doublejunction tandem solar cell was designed and fabricated. In₀.₄Ga₀.₆ N cell was fabricated on Si photocell by implementing AlN/SiO₂/Si₃N4 interlayers. Interlayer influence on quantum efficiency of InGaN cell was studied under ideal irradiance AM1.5 solar spectrum at 300°K. Because of insertion of interlayers between InGaN and Si; the gradual efficiency enhancement with respect to the overlayer h-GaN (a = 3.183 nm) plane lattice was found to 8.3%, 5.9% and 5.1% for AlN (a = 3.11 nm), for SiO₂ (a = 4.9 nm) and for Si₃N4 (a = 7.76 nm), respectively. AlN was found to be an excellent and SiO₂ as preferable interlayer compared with Si₃N4. Coherence (in-plane lattice matching) of nano-interlayer appears to reduce photonic electro-migration hurdle between InGaN and Si; therefore, progressive enrichment of efficiency was realized.

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“…Consequently, the working temperature of III-V compound solar cells transferred on Si wafer was therefore lower than that of the conventional III-V compound solar cells under the sunlight illumination. In general, the lower working temperature was a benefit for reducing the dark current and increasing the open-circuit voltage (Tseng et al, 2009;Liu et al, 2013). To simplify the whole process for fabricating the III-V compound solar cells on Si wafer, the GaAs-based epitaxial layers were directly grown on Si wafer instead of transferring to Si wafer.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer

et al. 2015

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Nitride-based concentrator solar cells grown on Si substrates

Cited by 16 publications

References 29 publications

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

InGaN photocell significant efficiency enhancement on Si - an influence of interlayer physical properties

Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer

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