Nearly similar molar ratio of in and Ga in indium gallium nitride (InGaN) /Si photocells prefers to match InGaN conduction level energy to Si valance energy band for ohmic contact between two cells. At high temperature fabrication process, InGaN-Si interface shows highly defecting prone. Considering those tussles, InGaN-based/Si-based doublejunction tandem solar cell was designed and fabricated. In₀.₄Ga₀.₆ N cell was fabricated on Si photocell by implementing AlN/SiO₂/Si₃N4 interlayers. Interlayer influence on quantum efficiency of InGaN cell was studied under ideal irradiance AM1.5 solar spectrum at 300°K. Because of insertion of interlayers between InGaN and Si; the gradual efficiency enhancement with respect to the overlayer h-GaN (a = 3.183 nm) plane lattice was found to 8.3%, 5.9% and 5.1% for AlN (a = 3.11 nm), for SiO₂ (a = 4.9 nm) and for Si₃N4 (a = 7.76 nm), respectively. AlN was found to be an excellent and SiO₂ as preferable interlayer compared with Si₃N4. Coherence (in-plane lattice matching) of nano-interlayer appears to reduce photonic electro-migration hurdle between InGaN and Si; therefore, progressive enrichment of efficiency was realized.

The effect of different anti-reflective coating on responsivity of silicon photo detector has been successfully analyzed in this work. N-type highly pure crystalline c-Si wafer based P + N photo detector is fabricated using Silvaco TCAD software. Different materials such as aluminium oxide (Al 2 O 3 ), zinc oxide (ZnO), silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ) and silicon carbide (SiC) are used as the antireflective coating. Different thickness of SiO 2 +Si 3 N 4 anti reflective coating (window) layers are designed for simulation and analysis of solar spectrum response. Improvement of the responsivity in the silicon photo detector is obtained by applying different materials as its coating. Combination of SiO 2 and Si 3 N 4 dual layer anti-reflective coating is found promising for responsivity aspect.Index Terms-Silvaco TCAD, photo detector, anti reflective coating, aluminium oxide, zinc oxide, silicon nitride, silicon dioxide, silicon carbide.

Solar UV detector industrial applications and monitoring is potential approach for technology based industrial development and ecosystem management aspects. Respect to visible spectrum both shorter and longer line width are not so promising for solar energy detecting/ harvesting by using Si technology. For lower energy edge of UV band absorption process, utilization of UV compatible higher energy edge reaping supportive thickness of additional Si 3 N 4 layer on SiO 2 coating layer for crystalline c-Si detector is found promising. As compared to single SiO 2 coating layer or bared c-Si cell, applications of SiO 2 +Si 3 N 4 double coating layer enhancement of the detector current or responsivity is specifically observed. Compare to lower energy edge of solar spectrum, UV (A-B) band enhanced energy conversion slant is found attractive. In this article, using ≤60 nm SiO 2 +Si 3 N 4 harmonized coating layers on P + N, N + P and P + IN Si based detector, very intense UV band response is realized. It appears that tiny i-layer with minimum n-doping in P + iN structure as compared to the P + N detector, increases the conversion efficiency. Compared to P + N detector N + P detector responsivity or conversion efficiency is found to be enhanced explicitly.

No abstract

No abstract