Different materials coating effect on responsivity of Si UV photo detector

Abstract

The effect of different anti-reflective coating on responsivity of silicon photo detector has been successfully analyzed in this work. N-type highly pure crystalline c-Si wafer based P + N photo detector is fabricated using Silvaco TCAD software. Different materials such as aluminium oxide (Al 2 O 3 ), zinc oxide (ZnO), silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ) and silicon carbide (SiC) are used as the antireflective coating. Different thickness of SiO 2 +Si 3 N 4 anti reflective coating (window) layers are designed for simulation and analysis of solar spectrum response. Improvement of the responsivity in the silicon photo detector is obtained by applying different materials as its coating. Combination of SiO 2 and Si 3 N 4 dual layer anti-reflective coating is found promising for responsivity aspect.Index Terms-Silvaco TCAD, photo detector, anti reflective coating, aluminium oxide, zinc oxide, silicon nitride, silicon dioxide, silicon carbide.

The effect of antireflection coating on the characteristics of wideband silicon avalanche photodetectors

“…Developing a wideband enhanced antireflection coating is beneficial for achieving high response wideband silicon detectors. For UV antireflective coatings [5][6][7] , the quantum efficiency can reach over 60% by using single or multi-layer antireflective coatings; adopt δ doped CCD can achieve high quantum efficiency in the ultraviolet and visible light bands [8] , and nearinfrared designed antireflection coatings can be applied to aerospace silicon imagers [9] . ZnS thin coatings are ideal antireflection materials for long wave infrared detectors [10][11] .…”