Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

Lee, Chia-En; Lai, Chun‐Feng; Lee, Yea-Chen; Kuo, Hao‐Chung; Lu, Tien−Chang; Wang, Shing-Chung

doi:10.1109/lpt.2008.2010953

Cited by 16 publications

(2 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We chose a 12-fold PQC pattern owing to a more enhanced surface emission. 30) This pattern was obtained from photonic crystals (PhCs) with a dodecagonal symmetric quasi-crystal lattice, as opposed to regular PhCs with a triangular lattice and an 8-fold PQC. 31) The NIL system was preheated at a temperature of 150°C under a pressure of 30 bar for about 5 min.…”

Section: Methodsmentioning

confidence: 99%

Enhanced Light Harvesting of Nitride-Based Nano-Pillars Covered with ZnO Using Indium-Tin-Oxide Nano-Whiskers

Hsu¹,

Lin²,

Lee³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

Nitride-based nanopillars were successfully fabricated by nanoimprint lithography. A nanowhisker of indium-tin oxide (ITO) deposited by on oblique evaporation method was investigated in nitride-based nanopillars and thin ZnO layers grown by atomic layer deposition (ALD). From the results of field-emission scanning electron microscopy (SEM) measurement, it was found that ITO whiskers grew on nitride-based nanopillars covered with ZnO. Moreover, from the results of UV-visible spectrophotometry and bidirectional reflectance distribution function (BRDF) measurements, it was found that this hybrid structure of ITO nanowhiskers above a ZnO medium enhanced the broadband and angle-independent antireflection in the range between 380 and 600 nm. We used the hybrid design of the ITO/ZnO structure to achieve the lowest reflectance value between 3.8 and 10.9% in a quantum well absorption range.

show abstract

Section: Methodsmentioning

confidence: 99%

Enhanced Light Harvesting of Nitride-Based Nano-Pillars Covered with ZnO Using Indium-Tin-Oxide Nano-Whiskers

Hsu¹,

Lin²,

Lee³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

show abstract

“…The details of the wafer bonded and laser lift-off (LLO) processing from III-nitride FTLEDs were described as the same in ref. 5, where bonded metal using Cr/Pt/Au (30/40/ 2000 nm). Then the sapphire-removed samples were dipped into HCl solution to remove the residual Ga on the undoped GaN.…”

Section: Methodsmentioning

confidence: 99%

Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes

Lai

Chao

Kuo

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The divergent far-field distribution of III-nitride ultrathin film-transferred light-emitting diodes (FTLEDs) with ellipse holes of triangular photonic crystal (PhC) lattice have been experimental and theoretical studies. Angular-and-spectral-resolved measurement revealed guided modes extraction behaviors which obtain good agreement with theoretical model according to two-dimensional free photon band structure. The azimuthal evolution of the guided modes' diffraction behavior according to Bragg's diffraction has also been discussed by angular-resolved monochromatical mapping. Finally, the PhC FTLEDs show light enhancement with the divergence far-field pattern that exhibited 130% at a driving current of 200 mA as compared with non-PhC (without PhC) FTLEDs. This could lead to promising LEDs with unusual divergent far-field properties for specific applications.

show abstract

Fabrication of photonic crystal structure on indium tin oxide electrode of GaN‐based light‐emitting diodes

Byeon

Park

Cho

et al. 2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting diodes (LEDs). Photonic crystal patterns with pitches ranging from 600 to 900 nm were transferred to the entire 2‐inch LED wafer. Plasma damage in the GaN crystal of the LED device was avoided because the GaN was covered by ITO layer and was not exposed to the etching plasma during the ITO dry etching process. Consequently, the electroluminescence intensity of the patterned LED devices was enhanced up to 25% at 20 mA of driving current, compared to the nonpatterned LED device, while the forward voltage was similar.

show abstract

Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

Cited by 16 publications

References 11 publications

Enhanced Light Harvesting of Nitride-Based Nano-Pillars Covered with ZnO Using Indium-Tin-Oxide Nano-Whiskers

Enhanced Light Harvesting of Nitride-Based Nano-Pillars Covered with ZnO Using Indium-Tin-Oxide Nano-Whiskers

Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes

Fabrication of photonic crystal structure on indium tin oxide electrode of GaN‐based light‐emitting diodes

Contact Info

Product

Resources

About