Nitride LEDs based on quantum wells and quantum dots

Verma, Jai; Verma, Amit; Protasenko, Vladimir; Islam, S. M.; Jena, Debdeep

doi:10.1533/9780857099303.2.368

Cited by 3 publications

References 142 publications

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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

Hartmann

Nicolai

Margenfeld

et al. 2018

Physica Status Solidi (b)

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GaN fins on GaN-on-sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar aplane sidewalls with an ultra-low threading dislocation density of a few 10 5 cm -2 making them ideally suited for optoelectronic to electronic applications. A detailed analysis of the inner structure of GaN fins is provided by the help of marker layer experiments and correlation of results from fins fabricated under different growth conditions, leading to the development of a growth model to explain the final geometry and optical as well as electrical properties of these high aspect ratio fins. Distinctly different material properties for the central and outer parts of the fins are detected. Whereas the outer sidewalls represent high quality GaN surfaces with

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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

Hartmann

Nicolai

Margenfeld

et al. 2018

Physica Status Solidi (b)

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Particle Size and Shape Engineering for Advanced Materials

Ningthoujam

Tyagi

2022

Handbook on Synthesis Strategies for Advanced Materials

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Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe₂

et al. 2019

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Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe2 in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free and bound exciton photoluminescence peaks with increasing electric fields at a constant carrier density, carefully compensating for unintentional photodoping in our double-gated device at 4K. We show that the Stark shift is < 0.4 meV despite the large electric fields applied, yielding an upper limit of polarizability αz to be ~ 10 -11 Dm/V. Such a small polarizability, which is nearly two orders of magnitude smaller than the previously reported value for MoS2, indicates strong atomic confinement of electrons in this 2D system and highlights the unusual robustness of free excitons against surface potential fluctuations.

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Nitride LEDs based on quantum wells and quantum dots

Cited by 3 publications

References 142 publications

3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

Particle Size and Shape Engineering for Advanced Materials

Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe₂

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Nitride LEDs based on quantum wells and quantum dots

Cited by 3 publications

References 142 publications

3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices

Particle Size and Shape Engineering for Advanced Materials

Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe2

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Product

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Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe₂