Nitride Nanocolumns for the Development of Light-Emitting Diode

Tang, Tsung-Yi; Lin, Chieh-An; Chen, Yung‐Sheng; Shiao, Wen-Yu; Chang, Wen-Ming; Liao, Che‐Hao; Shen, Kun-Ching; Yang, C. C.; Hsu, Ming‐Chen; Yeh, Jui-Hung; Hsu, Ta-Cheng

doi:10.1109/ted.2009.2034795

Cited by 27 publications

(15 citation statements)

References 65 publications

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“…We have observed that nanowires of GaN can be obtained by the ICP-RIE plasma etching technique without lithography (mask-less) processes. The formation of GaN nanowires has previously required photolithography techniques or self-assembly approach using a Ni catalyst [10][11][12]. The mask-less process produced GaN nanowires a few microns long and about 50-100 nm in diameter.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

“…The possible mechanism of the dislocation reduction is the existence of nanometer sized holes in the silicon nitride layer, which enhance the lateral growth and help to improve the quality of the subsequent GaN film. Other recent techniques, such as SiH 4 treatment [9] and nitride nanocolumns overgrowth [10], offer good reduction in dislocation density.…”

Section: Introductionmentioning

confidence: 99%

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Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Frajtag

Samberg

El‐Masry

et al. 2011

Journal of Crystal Growth

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Section: Experimental Procedures and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Frajtag

Samberg

El‐Masry

et al. 2011

Journal of Crystal Growth

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“…These reasons provide a strong motivation for investigating their growth by the commercially preferred metalorganic vapor phase epitaxy (MOVPE) method. Such NRs can be grown using either a bottom-up approach using selective area epitaxy [8][9][10][11][12][13][14] or a top-down approach 15,16 in which NRs with controlled aspect ratio are etched from a planar film before the regrowth of GaN/InGaN shell layers over the NRs. 4,16,17 Irrespective of their method of formation, there is substantial evidence that GaN NRs are strain-free once their height exceeds their diameter.…”

Section: Introductionmentioning

confidence: 99%

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

et al. 2016

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Abstract. Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both f11-20g a-plane and f10-10g m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the f10-10g m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the f10-10g facets of the NRs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Recently, nanoscale epitaxial lateral overgrowth (NELOG) was found to be a promising method. During the NELOG process, coalescence overgrowth of nanostructures not only improves crystal quality [18], but also produces a scattering effect on the emitted photons, leading to higher light-extraction efficiency (LEE) [19]. The nanostructures were generally fabricated by top-down methods [20]- [22], such as etching process, in which the dry etching procedure normally generates defect states on the column surfaces, causing reduction of internal quantum efficiency (IQE).…”

mentioning

confidence: 99%