2016
DOI: 10.1063/1.4939460
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Nitride passivation of the interface between high-k dielectrics and SiGe

Abstract: In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma… Show more

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Cited by 38 publications
(12 citation statements)
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“…The results obtained are displayed in Figure d. Suboxides (GeO) resulting from the partial reduction of the fiber surface during the heat treatment upon inert atmosphere, and nitrogen‐containing Ge species (GeO x N y ) are present (at 31.6 and 32.7 eV BE, respectively) in all the investigated samples, with the percentage of GeO strongly increasing with T C at any w G . Conversely, the germanium dioxide contribution (at 33.4 eV) decreases up to vanish at 700 °C for higher w G values.…”
Section: Resultsmentioning
confidence: 94%
“…The results obtained are displayed in Figure d. Suboxides (GeO) resulting from the partial reduction of the fiber surface during the heat treatment upon inert atmosphere, and nitrogen‐containing Ge species (GeO x N y ) are present (at 31.6 and 32.7 eV BE, respectively) in all the investigated samples, with the percentage of GeO strongly increasing with T C at any w G . Conversely, the germanium dioxide contribution (at 33.4 eV) decreases up to vanish at 700 °C for higher w G values.…”
Section: Resultsmentioning
confidence: 94%
“…In addition, NH 3 is usually used instead of N 2 as a reactant because NH 3 has lower bond energy. Plasma nitriding has two main types: direct nitriding of the SiGe material and deposition of a high-Ä material and then nitriding [97] . Although the plasma nitriding process after the deposition of high-Ä materials with relatively low temperature can obtain a better interface in planar devices, it is difficult to guarantee the uniformity of passivation through the plasma passivation method for multi-gate devices such as FinFETs or stacked nanosheets.…”
Section: Passivationmentioning
confidence: 99%
“…To control the interface quality, many methods have been extensively explored, such as plasma (N 2 or NH 3 ) nitridation passivation [ 4 , 5 ], sulfur passivation [ 6 ], thermal oxidation [ 7 , 8 ], low-temperature ozone passivation [ 9 , 10 , 11 , 12 ] and Si-cap passivation [ 13 ]. Among them, low-temperature ozone passivation with low thermal budge and Si-cap passivation with excellent properties of interface are considered the most promising passivation methods.…”
Section: Introductionmentioning
confidence: 99%