Nitrogen and nitrogen-vacancy complexes and their formation in diamond

Mainwood, Alison

doi:10.1103/physrevb.49.7934

Cited by 189 publications

(132 citation statements)

References 36 publications

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“…Available evidence suggests that the mobility of such single impurity atoms will be similar to that of single C atoms in the diamond lattice (e.g. Stoneham, 1992;Mainwood, 1994). Thus, at the time of diamond growth, the mobility of C and N atoms in N-bearing (Type l) diamonds will be closely similar, but subsequent differences arise because the mobility of the N leads to N atoms meeting and forming: (1) pairs (the IaA aggregation state); (2) aggregates of four atoms plus a vacancy (the IaB aggregation state); or (3) combinations of three atoms or platelets.…”

Section: Atomic Mobility and N Aggregationmentioning

confidence: 99%

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Carbon isotope ratios and nitrogen abundances in relation to cathodoluminescence characteristics for some diamonds from the Kaapvaal Province, S. Africa

et al. 1999

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Secondary ion mass spectrometry (SIMS) techniques have been used to study the variation of C isotope ratio and N abundance within selected diamonds in relation to their crystal growth zones. The growth zones are seen in cathodoluminescence (CL), and include both octahedral and cuboid zones within typical diamonds of external octahedral morphology. Compositions were determined by use of a primary 133Cs + ion beam and measurement of 12C-, 13C , and 12C14N-secondary ions at high mass resolution on a Cameca ims-4f ion microprobe at Edinburgh University.In each of the diamonds, different growth zones have marked differences in N abundance, which are as great as 0-1400 ppm within one diamond. Changes of several hundred ppm N are common across both octahedral and cuboid growth zones, and appear sharp and abrupt at the boundaries of the growth zones. In general for the common blue CL, luminescence increases with N abundance. The changes in N abundance across fine scale (-100 gm) growth zones show that the total N contents determined byIR spectroscopy may show great varmtlons of abundance. In contrast, w~thm detection hm ts, 8 C appears constant across many growth zone boundaries. Thus the factors controlling uptake of N from the fluid/melt reservoir in which natural diamonds grow often do not influence 813C. No evidence of progressive variation or fractionation of C isotopes during growth was found. Some original variation in C isotope composition may have been eliminated by diffusion of C atoms subsequent to growth, because of the storage of natural diamonds over millions of years in the Earth's mantle at temperatures of 950-1250~ Such atomic mobility does not homogenize N distribution because of the proven tendency of N to form aggregates of atoms. A survey of experimental estimates of single atom (C) diffusion parameters, suggests that diffusion distances of-100 pm are likely at high temperatures (-1100~ over long time periods (~1.0 Ga). Therefore, with refinement of the diffusion parameters and measurements, the extent of C isotope homogenization in natural diamonds, as well as N aggregation state, might provide quantitative evidence of their time-temperature history under mantle conditions.

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Section: Atomic Mobility and N Aggregationmentioning

confidence: 99%

“…Evans, 1992;Mainwood, 1994;Taylor et al, 1996). Available evidence suggests that the mobility of such single impurity atoms will be similar to that of single C atoms in the diamond lattice (e.g.…”

Section: Atomic Mobility and N Aggregationmentioning

confidence: 99%

Carbon isotope ratios and nitrogen abundances in relation to cathodoluminescence characteristics for some diamonds from the Kaapvaal Province, S. Africa

et al. 1999

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“…113 The natural diamonds have mainly aggregated nitrogen defects (type Ia), while synthetic high-pressure hightemperature diamonds are predominantly embellished with single substitutional nitrogen centers (type Ib). 114 Irradiation damage of type Ib diamond crystals creates intrinsic defects, such as vacancies, which, upon thermal annealing, move towards nitrogen centers (N) and become trapped within to form N-V color defect centers. 23 Generally, irradiation of these diamond particles is carried out by high-energy electron (∼2 MeV) [115][116][117] or proton (∼3 MeV) 69,118 beam using Van de Graaff or tandem particle accelerators, respectively.…”

Section: Nds As Bioimaging Agents Fluorescence Of the Ndsmentioning

confidence: 99%

Nanodiamonds as novel nanomaterials for biomedical applications: drug delivery and imaging systems

Kaur¹,

Badea²

2013

IJN

104

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Detonation nanodiamonds (NDs) are emerging as delivery vehicles for small chemical drugs and macromolecular biotechnology products due to their primary particle size of 4 to 5 nm, stable inert core, reactive surface, and ability to form hydrogels. Nanoprobe technology capitalizes on the intrinsic fluorescence, high refractive index, and unique Raman signal of the NDs, rendering them attractive for in vitro and in vivo imaging applications. This review provides a brief introduction of the various types of NDs and describes the development of procedures that have led to stable single-digit-sized ND dispersions, a crucial feature for drug delivery systems and nanoprobes. Various approaches used for functionalizing the surface of NDs are highlighted, along with a discussion of their biocompatibility status. The utilization of NDs to provide sustained release and improve the dispersion of hydrophobic molecules, of which chemotherapeutic drugs are the most investigated, is described. The prospects of improving the intracellular delivery of nucleic acids by using NDs as a platform are exemplified. The photoluminescent and optical scattering properties of NDs, together with their applications in cellular labeling, are also reviewed. Considering the progress that has been made in understanding the properties of NDs, they can be envisioned as highly efficient drug delivery and imaging biomaterials for use in animals and humans.

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“…[20][21][22][23] A second acid cleaning step is performed for 4 hours after annealing to remove graphitic carbon and to oxygen terminate the surface.…”

Section: 18mentioning

confidence: 99%

Highly tunable formation of nitrogen-vacancy centers via ion implantation

Sangtawesin

Brundage

Atkins

et al. 2014

Applied Physics Letters

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We demonstrate highly-tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15 N + ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5 × 10 10 to 2 × 10 11 ions/cm 2 , we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6 − 7 %, consistent across all ion fluences. The implanted NV centers have spin dephasing times T * 2 ∼ 3 µs, comparable to naturally occurring NV centers in high purity diamond with natural abundance 13 C. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures.Advances in quantum information processing (QIP) require the use of multiple qubits that are stable and easily addressable. The NV center in diamond stands out as a candidate for this application due to its spindependent fluorescence and long coherence time at room temperature.1-4 However, the feasibility of integrating naturally occurring NV centers into a large-scale QIP architecture is limited by their random locations in the diamond lattice. The technique of nitrogen ion implantation can overcome this obstacle by offering precise control of NV center locations, while maintaining the quality of the NV centers created. 4-11In order to achieve high accuracy placement of NV centers, techniques such as implantation through a scanning force microscope tip, focused-ion beam, and apertures in implantation masks have been developed. [10][11][12] In terms of ease of fabrication and scalability, one of the most versatile methods is implantation through lithographically defined apertures. 6,13In this Letter, we study the efficacy of this method by demonstrating highly-controllable NV implantations with different ion fluences across a wide range of aperture diameters. Within each ion fluence, aperture diameters vary from 80 to 240 nm. We characterize the implanted NV centers using photoluminescence (PL) data and autocorrelation measurements g (2) (τ ). 14 Together, these data allow us to determine the statistics of NV center formation. We observe a linear relationship between the mean number of NV centers per aperture and the aperture area, from which we extract implantation yields of 6 − 7%. These yields are consistent across all ion fluences and with previously reported values.6,13,15 Finally, we measure spin dephasing times T * 2 ∼ 3 µs, a value comparable to that of naturally occurring NV centers, thus demonstrating the capability to maintain high quality NV centers and fine-tune the NV population distribution at well-defined locations. 16,17We begin by selecting an electronic grade diamond (N < 5 ppb, natural abundance 13 C, Element Six) with (100) orientation and low background PL. Typically, no NV cente...

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Nitrogen and nitrogen-vacancy complexes and their formation in diamond

Cited by 189 publications

References 36 publications

Carbon isotope ratios and nitrogen abundances in relation to cathodoluminescence characteristics for some diamonds from the Kaapvaal Province, S. Africa

Carbon isotope ratios and nitrogen abundances in relation to cathodoluminescence characteristics for some diamonds from the Kaapvaal Province, S. Africa

Nanodiamonds as novel nanomaterials for biomedical applications: drug delivery and imaging systems

Highly tunable formation of nitrogen-vacancy centers via ion implantation

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