Nitrogen Boosts Defective Vanadium Oxide from Semiconducting to Metallic Merit

Abstract

2D metal oxide nanosheets have attracted substantial attention for various applications owing to their appealing advantages. Yet, the exploration of effective methodology for fabrication of metallic 2D metal oxides with a high concentration of N dopants in a scalable manner remains challenging. Herein, a topochemical strategy is demonstrated on vanadium oxide nanosheets by combining 2D nanostructuring, heteroatom‐doping, and defect engineering for modulating their intrinsic electronic structure and greatly enhancing their electrochemical property. O vacancies and N dopants (VON and VN bonds) are in situ formed in vanadium oxide via nitridation and lead to semiconductive‐to‐metallic phase transformation evidenced by experimental results and theoretical calculation. Overall, the N‐VO0.9 nanosheets exhibit a metallic electron transportation behavior and excellent electrochemical performance. These findings shed light on the rational design and electron structure tuning of 2D nanostructures for energy and electronics applications.

Metallic Sandwiched-Aerogel Hybrids Enabling Flexible and Stretchable Intelligent Sensor

“…The 1.77 × 10 4 -fold improvement in conductivity for VN/CNTs compared with V 2 O 5 · n H 2 O was realized, which can be mainly ascribed to the nitridation and carbonization process. The enhancement of the conductivity is in good agreement with the previous reports (2.4 × 10 –2 S m –1 for V 2 O 5 · n H 2 O, 1.67 × 10 6 S m –1 for VN, and 4.16 × 10 4 S m –1 for N-doped CNT). − Further, the fabrication technique for the flexible strain sensor is illustrated in Figure a. A micropatterned poly­(methyl methacrylate) (PMMA) strip-type (with the size of tens of micrometers) template was used assisted by a barrier film with the identical hollowed patterns.…”

Defect‐Concentration‐Mediated T‐Nb2O5 Anodes for Durable and Fast‐Charging Li‐Ion Batteries

“…Partial density of state (PDOS) was employed to reveal the electrical conductivity derived from different oxygen defect structures. [ 52 ] As shown in Figure 6d, T‐Nb 2 O 5− x with oxygen vacancies on position 1 has a bandgap of 1.365 eV, much lower than that of pristine T‐Nb 2 O 5 (1.844 eV). In comparison, T‐Nb 2 O 5− x with oxygen vacancies on positions 2 and 3 displays the approximate bandgaps with that of pristine T‐Nb 2 O 5 .…”

Atomically precise vanadium-oxide clusters

“…14,15,[191][192][193] An alternative method to anionically-doping vanadium oxide materials is through the substitution of oxide moieties for non-oxygen anions such as halides, [194][195][196][197][198][199][200] sulfides, [201][202][203] or nitrides. 204,205 Experimental and computational investigations have shown that both physical and chemical properties are significantly influenced by the introduction of these anionic dopants. Indeed, numerous studies have revealed that increasing the concentration of oxygen-deficient vanadium centres in V x O y greatly enhances the catalytic activity of these materials toward small molecule activation processes as these vacant sites are proposed to be the active sites of catalysis.…”