The nitrogen-atom endohedral fullerene (N@C 60 ) with relatively higher purity [molar concentration ratio of N@C 60 to pristine fullerene (C 60 )] has been synthesized by controlling plasma ion irradiation energy (E i ) and C 60 behavior. We have examined the relationship between the synthesis purity of N@C 60 and E i which is controlled by changing the substrate bias voltages (V sub ) and gas pressure (P N2 ) during the plasma irradiation process. It has been clarified that there is an optimum condition of the nitrogen plasma for the high-purity synthesis of N@C 60 , which consists of the high-density nitrogen-molecular ions (N 2 + ) with suitable E i from 40 to 80 eV. In addition, control of C 60 behavior contributes to an increase in the reaction between C 60 and N 2 + to form N@C 60 , resulting in the synthesis of N@C 60 with the highest purity of 0.56 % in the world.