This study presents the fabrication of a Mg-doped Si/Al2O3/ZnO nanowall heterojunction ultraviolet (UV)
detector
via magnetron sputtering, electron beam evaporation, and a hydrothermal
method. The effects of Mg doping on the crystal structure, surface
morphology, Raman characteristics, photoluminescence, and UV detection
performance of the ZnO nanowall are investigated, demonstrating the
high stability of the Si/Al2O3/ZnO nanowall
heterojunction UV detector. Notably, when the Mg doping concentration
is 2 mol %, the detector exhibits a total current of 0.030 A. When
the Mg doping concentration is increased from 0 to 2 mol %, the responsivity
increases from 0.165 to 2.001 A/W. Moreover, the sensitivity increases
from 11.45 to 76.77, whereas the response time reduces by 80%. These
findings demonstrate the promising performance enhancement of UV detectors
facilitated by Mg doping, expanding their application scope in the
realm of UV detection. The Mg-doped Si/Al2O3/ZnO nanowall heterojunction UV detector demonstrates considerably
improved responsiveness and response speed, emphasizing its broad
application scope in various fields, such as energy conservation and
carbon reduction and information technology.