Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

Abstract

We have grown nitrogen-doped Mg x Zn 1−x O : N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH 3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration ͑ϳ1 ϫ 10 19 cm −3 ͒. The heterosructures of Mg x Zn 1−x O:N ͑0.1Յ x Յ 0.4͒ / ZnO were fabricated into light emitting diodes of 500-m-diameter. We observed ultraviolet near-band-edge emission ͑ ϳ 382 nm͒ with an output power of 0.1 W for a NO-plasma-doped LED and 70 W for a NH 3-doped one at a bias current of 30 mA.

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

“…In fact, many sophisticated strategies have been employed to achieve suitable p-type doping in ZnO. [5][6][7][8][9][10][11][12][13] Among them, nitrogen has been considered as a promising p-type dopant of ZnO because of its similar ionic radius to oxygen. 14 Although nitrogen incorporation in ZnO has been intensively investigated experimentally and theoretically, the progress along this direction is slow, and nitrogen doping mechanisms and modes [15][16][17][18][19] are still controversial.…”

Exploration of Electronic Functionalities in Metal Oxides by Combinatorial Lattice Engineering

“…127 The spectrum indicated by blue line (bare LED D) in Figure 15b was taken for one of the devices composed of p-type Mg 0.4 Zn 0.6 O/ZnO. The output power from some of the LEDs prepared using NO plasma (LEDs A and B) and NH 3 (LEDs C and D) is plotted as a function of input current density in Figure 15a in comparison with a commercially available InGaN based LED with similar peak emission wavelength.…”

Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

“…2 ' 3 Moreover, the accomplishment of UV LEDs based on MgZnO has been demonstrated very recently. 4 Nevertheless, due to the different stable phases of MgO (rock salt) and ZnO (wurtzite), the potential of these ternary layers is strongly limited by the presence of phase separation for x ~ 0.4. 5 Although some works have reported the growth of wurtzite c-plane MgZnO layers with x ~ 0.5, 6 ' 7 most of the attempts to achieve high Mg contents finally led to cubic structures.…”

“…Additional details of the growth conditions for a-ZnMgO/ r-sapphire can be found in ref. 12,14 and 15. RBS/C experiments were performed with a 3.035 MeV 4 He beam (lxl mm 2 spot). The probing energy was selected to increase the sensitivity to O (thanks to the nuclear resonanee of this element 16 ' 17 ) and, simultaneously, to allow certain separation of Zn and Mg signáis (needed for the lattice-site analysis).…”