Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide

Challenges for Future Semiconductor Manufacturing

“…Several achievements in finding new materials and developing new process for sub-100 nm device manufacturing have been made recently. These processes or materials include the elevated source/drain [29][30][31][32][33], plasma doping with flash or laser annealing [34][35][36][37][38][39][40][41][42][43], NiSi silicide [44][45][46][47][48][49][50][51][52][53][54][55][56], strained Si channel for mobility enhancement [57][58][59][60][61][62][63][64], silicon on insulator (SOI) [65][66][67], three-dimensional structure [68][69][70][71][72][73][74][75] high dielectric constant (high-k) gate insulator …”

Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

“…A twostep silicidation process has been developed to suppress this failure mode (Iwai et al, 2002;Jiang et al, 2004;Yamaguchi et al, 2005;Kashihara et al, 2006). Agglomeration and limited phase stability (anomalous phase transition to NiSi 2 ), identified as main concerns recently, result from the poor thermal stability of NiSi (Ohguro et al, 1995;Lauwers et al, 2000;Yamaguchi et al, 2005;Kashihara et al, 2006;Chiu et al, 2004;Oh et al, 2005;Deduytsche et al, 2005;Deduytsche et al, 2007). These two phenomena increase the resistance of the nickel silicide films and the roughness of the nickel silicide-silicon interface during the fabrication process of CMOS devices.…”

“…Nickel silicides have recently received much attention as a high-conductivity material for advanced complementary metaloxide-semiconductor field-effect transistors (CMOSFETs) (Ohguro et al, 1994;Ohguro et al, 1995;Lauwers et al, 2000;Maa et al, 2001;Lauwers et al, 2001;Iwai et al, 2002;Suguro et al, 2002;Jiang et al, 2004;Yamaguchi et al, 2005;Kashihara et al, 2006). There are several phases in the nickel-silicon system: nickel-rich silicides, Ni 2 Si, NiSi, and NiSi 2 .…”

“…These two phenomena increase the resistance of the nickel silicide films and the roughness of the nickel silicide-silicon interface during the fabrication process of CMOS devices. Moreover, the oxidation of nickel silicides increases the nickel silicide-silicon interface roughness (Ohguro et al, 1995;Kanda et al, 2002), whereas the formation of silicon nitrides at the NiSi surface effectively reduces such roughness (Ohguro et al, 1995). However, the incidence of these degradation phenomena must be extremely low in order to achieve a high yield for nanoscale CMOS devices.…”

Comparative study of current–voltage characteristics of Ni and Ni(Pt)-alloy silicided p+/n diodes

“…[4][5][6] In this work, we have measured, analyzed, and compared the I -V characteristics of Ni and Ni͑Pt͒-alloy silicided p ϩ /n diodes. The results of this work reveal that, for pure Ni silicidation, an rapid thermal processing ͑RTP͒ silicidation at 700°C or above may induce the formation of Schottky contacts in the p ϩ /n junctions, resulting in higher saturation currents (I S ) and abnormal reverse I -V characteristics.…”