Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Eid, Jessica; Galben, Irina; Zoulis, Georgios; Robert, Teddy; Chaussende, Didier; Juillaguet, Sandrine; Tiberj, Antoine; Camassel, Jean

doi:10.4028/www.scientific.net/msf.615-617.45

Cited by 5 publications

(8 citation statements)

References 9 publications

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“…Generally, these pits were related to Ds. 22,25,26 For the intrinsic sample (2 × 10 16 atom/cm 3 ), we observe a constant value of about 120 cm −2 , along all thicknesses. For all doped samples, instead, at about 10 μm from the removed silicon interface (black squares), the density of the etched pits is in the range between 5.5 × 10 2 and 3.0 × 10 3 cm −2 , and it increases by enhancing the nitrogen concentration.…”

Section: ■ Results and Discussionmentioning

confidence: 65%

“…Figure shows the density of the diamond-shaped etched pits as a function of the nitrogen concentration. Generally, these pits were related to Ds. ,, …”

Section: Results and Discussionmentioning

confidence: 89%

“…In Figure 5a, we can observe the linear pits with various lengths and widths due to etched SFs. In Figure 5b, instead, in addition to the SFs, it is possible to observe the diamondshaped pits generally related to Ds, 22,25,26 as indicated by the arrows.…”

Section: ■ Results and Discussionmentioning

confidence: 97%

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Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Calabretta

Scuderi

Bongiorno

et al. 2022

Crystal Growth & Design

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Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs.

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Section: ■ Results and Discussionmentioning

confidence: 65%

“…Figure shows the density of the diamond-shaped etched pits as a function of the nitrogen concentration. Generally, these pits were related to Ds. ,, …”

Section: Results and Discussionmentioning

confidence: 89%

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Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Calabretta

Scuderi

Bongiorno

et al. 2022

Crystal Growth & Design

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“…CVD is the most commonly used growth method and involves three general steps: (i) hydrogen surface etching to remove any native oxide; (ii) a carbonization process to form a buffer (sealing) layer; and (iii) the supply of gases to grow the 3C‐SiC layer . CVD growth parameters such as temperature, deposition rate, and pressure greatly impact the quality of the as‐grown 3C‐SiC films . Modification of these parameters and the growth steps have led to the production of very high quality monocrystalline films .…”

Section: Heteroepitaxy Of 3c‐sic On Simentioning

confidence: 99%

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany

Bennett

Valenzuela

et al. 2016

Phys. Status Solidi A

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Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.

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“…The N incorporation is as follow: (111)-C face > (100) face > (111)-Si face. The incorporation difference is all the more important than the nitrogen flow rate is high in the gas phase [25].…”

Section: In-situ N-type Dopingmentioning

confidence: 99%

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Chaussende

Eid

Mercier

et al. 2009

MSF

Self Cite

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The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.

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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Cited by 5 publications

References 9 publications

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

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