Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Abstract

The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system

“…However, this method can grow only thin (a few micrometers) epilayers with small sizes (about 1 cm 2 ) [13]. Nevertheless, it can be used to produce high-quality 3C-SiC seeds that do not have double-positioning boundaries (DPBs) for bulk growth processes such as continuousfeed physical vapor transport (CF-PVT) [14].…”

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

“…Besides the semi-bulk growth by continuous feed physical vapor transport (CF-PVT) [1], methods like the fast sublimation growth process [2,3] and the vapor-liquid-solid mechanism (VLS) [4] rely on the use of comparatively expensive substrates of hexagonal silicon carbide (4H-SiC or 6H-SiC). In the fast sublimation growth process (FSGP), homoepitaxial growth of hexagonal SiC has shown a structural improvement compared with the substrate [5] while in heteroepitaxy a full polytype conversion to 3C-SiC is still to be mastered [3], and in VLS the growth rate is low.…”

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

“…3C-SiC is a promising polytype for obtaining high-performance MOSFETs because electron trapping by "near-interface-traps" in the SiO 2 /3C-SiC interface can be largely suppressed comparing to 4H-and 6H-SiC [1,2]. There are some methods for the growth of 3C-SiC such as chemical vapor deposition (CVD) method [3], sublimation method [4,5], continuous-feed physical vapor transport (CF-PVT) [6] and vapor-liquid-solid (VLS) method [7]. We have studied the top seeded solution growth (TSSG) method that is considered to be suitable for the high quality bulk crystal growth [8][9][10].…”