Nitrogen−implanted silicon. II. Electrical properties

Abstract

This paper presents measurements of capacitance−voltage, Hall−effect, and diode characteristics on nitrogen−implanted silicon as a function of anneal temperature. The results of these three types of electrical measurements are consistent and show that less than 1% of the implanted nitrogen exhibits donor effects following anneals in the temperature range ∼700−900 °C. Hall−effect measurements performed as a function of temperature indicate that nitrogen in silicon has an ionization energy of 0.017±0.002 eV. Room−temperature Hall−effect measurements combined with stripping techniques have shown that the distribution of electrically active nitrogen is constant as a function of implantation depth. These results are believed to be due to a donor (substitutional) position involving <1% of the implanted nitrogen ions; this interpretation is consistent with the lattice location and damage results presented in Paper I.

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

“…The behaviour of nitrogen complexes in silicon is quite involved with many nitrogen-interstitial and vacancy complexes predicted to be deep donors and acceptors. 42 Experimentally, however, nitrogen is known to transition from being a donor in Si with <1% activation at low annealing temperatures to being electrically inactive for annealing temperatures >850°C, 43 which should be the case for MOCVD grown AlN films (1050°C in our case, for instance). However, the simultaneous presence of high concentrations of oxygen and nitrogen atoms in the top surface of silicon indicates the possibility of forming Si-O-N complexes which can act as thermal acceptors.…”

Vibrational modes and electronic properties of nitrogen defects in silicon

“…Early experiments suggested that N s possesses a shallow level (E c Ϫ0.017 eV). 43 However, this was later shown to be in error since the SL5 EPR center is associated with a ''deep level.'' 34 N-related levels at E c Ϫ0.19 eV (E 2 ) and E c Ϫ0.28 eV (E 3 ) have been observed in deep-level transient spectroscopy ͑DLTS͒ of n-type material doped during growth, 44 although these centers constitute, respectively, only 0.1% and 0.01% of the total nitrogen concentration of the material (10 15 cm Ϫ3 ).…”

Properties of Nitrogen Molecules in ZnO

“…9 On the other hand, when impurity-like concentrations are introduced into a semiconductor, the properties of nitrogen are determined by its interaction with the semiconductor host material. While, for instance, nitrogen doping of group IV semiconductors, such as diamond and silicon, introduces deep and shallow donors, [10][11][12] in conventional group III-V semiconductors nitrogen acts as an acceptor. 13 For ZnO, which is a promising material for blue and ultraviolet (UV) light-emitting diodes and lasers, use of nitrogen has been suggested to achieve p-type doping.…”