Properties of Nitrogen Molecules in ZnO

Nickel, N. H.; Gluba, Marc A.

doi:10.1007/s11664-010-1456-1

Cited by 4 publications

(2 citation statements)

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“…In ZnO, molecular nitrogen introduces a state which acts as a hole trap. 45 This would be problematic for p-type ZnO, but the effect would be negligible for the n-type ZnO films in this work.…”

Section: Resultsmentioning

confidence: 88%

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

2018

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Section: Resultsmentioning

confidence: 88%

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

2018

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“…30 Likewise, the enhancement exhibited by the E 1 (LO) mode at 580 cm À1 can be also ascribed to the formation of these Zn I -related defects as this type of complex would produce the breaking of the Zn-O bonds, giving rise to such E 1 (LO) mode. 31 Furthermore, the relative intensities of the defect-related peaks with respect to the E 2 (high) mode in the spectra corresponding to sample series #3 (i.e., samples grown at R VI/II constant) have been analyzed. Figure 2 can be seen, the relative intensities increase with the flow rate of zinc precursor until they reach a threshold from which they saturate.…”

Section: Raman Characterizationmentioning

confidence: 99%

Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

Montenegro

Hortelano

Martı́nez

et al. 2013

Journal of Applied Physics

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A detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy of catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition has been carried out. This characterization has allowed correlating the growth conditions, in particular the precursors partial-pressures and growth time, with the optical properties of nanorods. It has been shown that a high Zn supersaturation can favor the incorporation of nonradiative recombination centers, which can tentatively be associated with Zn I -related defects. Characterization of individual nanorods has evidenced that Zn I -related defects have a tendency to accumulate in the tip part of the nanorods, which present dark cathodoluminescence contrast with respect to the nanorods bottom. The effect of a ZnO buffer layer on the properties of the nanorods has been also investigated, showing that the buffer layer improves the luminescence efficiency of the ZnO nanorods, revealing a significant reduction of the concentration of nonradiative recombination centers. V C 2013 AIP Publishing LLC [http://dx.

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First-principle investigation of K–N dual-acceptor codoping for p-ZnO

Shao

et al. 2015

Materials Science in Semiconductor Processing

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Properties of Nitrogen Molecules in ZnO

Cited by 4 publications

References 30 publications

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

First-principle investigation of K–N dual-acceptor codoping for p-ZnO

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