First-principle investigation of K–N dual-acceptor codoping for p-ZnO

Wu, Jun; Hu, Jiang; Shao, Lihuan; Xu, Ji; Song, Kexing; Zheng, Peng

doi:10.1016/j.mssp.2014.03.050

Cited by 16 publications

(2 citation statements)

References 28 publications

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“…Sodium (Na) is a suitable acceptor from the group I. Na delivers a high hole concentration up to 3 × 10 18 cm −3 and possesses a relatively shallow substitutional level (Na Zn : 0.17 eV) 22 . Hence, Na is an excellent substitute for Zn 23 24 25 .…”

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confidence: 99%

Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

Basyooni

Shaban

Sayed

2017

Sci Rep

170

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In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm.

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confidence: 99%

Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films

Basyooni

Shaban

Sayed

2017

Sci Rep

170

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“…The 3rd kind of the co-doping scheme is the dual-acceptor (AA) codoping. Calculations of Li-N and K-N co-doped ZnO system have been conducted by Gai et al [81] and Wu et al, [82] and the results demonstrated the beneficial effect of AA co-doping.…”

Section: Fermi Energy/ev Formation Energy/evmentioning

confidence: 98%

Recent progress of the native defects and p-type doping of zinc oxide

Tang

et al. 2017

Chinese Phys. B

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Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy. The unique property, i.e., high efficient light emission at ultraviolet band, makes ZnO potentially applied to the short-wavelength light emitting devices. However, efficient p-type doping is extremely hard for ZnO. Due to the wide band gap and low valence band energy, the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration. Native defects in ZnO can be divided into donor-like and acceptorlike ones. The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors. While the acceptor-like defect, zinc vacancy, is thought to be linked to complex shallow acceptors in group-VA doped ZnO. Therefore, the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction. Meanwhile, some novel ideas have been extensively proposed, like double-acceptor co-doping, acceptor doping in iso-valent element alloyed ZnO, etc., and have opened new directions for p-type doping. Some of the approaches have been positively judged. In this article, we thus review the recent (2011-now) research progress of the native defects and p-type doping approaches globally. We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

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