Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Modic, Aaron; Sharma, Yogesh; Xu, Yi; Liu, Gang; Ahyi, A. C.; Williams, John R.; Feldman, L. C.; Dhar, Sarit

doi:10.1007/s11664-014-3022-8

Cited by 16 publications

(11 citation statements)

References 20 publications

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“…nitrogen or phosphorus). [6][7][8][9][10] Recent reports on high-temperature oxidation of 4H-SiC have shown that this process could be beneficial for the 4H-SiC/SiO 2 interface. [11][12][13][14] It has been reported 12 that as-grown 4H-SiC oxidized at 1500°C resulted in a 4H-SiC MOSFET with maximum field-effect mobility of 40 cm 2 /V s; here we investigate a similar effect for the 3C-SiC/SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Sharma

Jennings

et al. 2015

Journal of Elec Materi

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In a novel approach, high temperatures (1200-1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO 2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metaloxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO 2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm 2 /V s.

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Section: Introductionmentioning

confidence: 99%

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Sharma

Jennings

et al. 2015

Journal of Elec Materi

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“…In case of Si, the inversion channel mobility can be as much as 50% of bulk mobility [29]. In addition to standard N 2 O annealing, there are different types of annealing which can increase the channel mobility significantly, but these annealings degrade some important parameters of a MOSFET and hence cannot be used [44][45][46][47][48][49][50]. More work is still needed in this field to improve the performance of SiC MOSFETs.…”

Section: Oxidation Of Sicmentioning

confidence: 99%

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Sharma¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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“…Also for the Si face in 4H-SiC, it has been observed that mobility increases with decreasing D it . For example, as we go from thermally grown gate oxide to post-oxidation-annealed (passivated) oxide using hydrogen (H 2 ) passivation, NO/N 2 O passivation, nitrogen plasma (N-plasma) passivation or phosphorous (P) passivation, D it decreases significantly [37,[46][47][48]. Thomas et al have shown that as-grown oxidized at 1500°C resulted in a 4H-SiC MOSFET with maximum field-effect mobility of 40 cm 2 /V s. Sharma et al have studied high-temperature oxidation of 3C-SiC [49].…”

Section: High-temperature Dry/thermal Oxidation (1200-1400°c) and N 2mentioning

confidence: 99%

Advanced SiC/Oxide Interface Passivation

Sharma¹

2017

New Research on Silicon - Structure, Properties, Technology

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To save energy on an electric power grid, the idea of redesigned 'micro-grids' has been proposed. Implementation of this concept needs power devices that can operate at higher switching speeds and block voltages of up to 20 kV. Out of SiC and GaN wide band gap semiconductors, the former is more suitable for low-as well as high-voltage ranges. SiC exists in different polytypes 3C-, 4H-and 6H-. 4H-SiC due to its wider band gap, 3.26 eV has higher critical electric field of breakdown (E c ) and electron bulk mobility compared to 6H-SiC. Even with all these benefits 4H-SiC full potential has not yet been realized. This is due to high trap densities (D it ) at the interface. In addition to 4H-polytype, in recent years, there is a reignited interest on cubic silicon carbide (3C-SiC), which can be potentially grown heteroepitaxially on 12″ Si substrates, as it would result in a drastic cost reduction of semiconductor devices compared to the successful but exorbitantly expensive SiC hexagonal polytype technology (4H-SiC). In this chapter, we discuss and summarize all different interface passivation techniques or processes that have led to a vast improvement of these (4H-or 3C-SiC/SiO 2 ) interfaces electrically.

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Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Cited by 16 publications

References 20 publications

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Advanced SiC/Oxide Interface Passivation

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