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We report a low-temperature aqueous solution growth of uniformly aligned ZnO nanorod arrays on flexible substrates. The substrate is Indium Tin Oxide (ITO) film coated on polyethylene terephthalate (PET). Solutions with five different concentrations of the precursors with equimolar Zinc Nitrate and Hexamethylenetetramine (HMT) in distilled water were prepared to systematically study the effect of precursor solution concentration on the structural and optical properties of ZnO nanorods. It was concluded that the precursor concentration have great influence on the morphology, crystal quality, and optical property of ZnO nanorods. The diameter, density, and orientation of the nanorods are dependent on the precursor solution concentration. X-ray diffraction and micro-Raman spectroscopy showed that the ZnO nanorods with the highest concentration of 50 mM were highly aligned and have the highest level of surface coverage. It was also found that the diameter and length of the nanorods increases upon increasing precursor solution concentration. This is the first systematic investigation of studying the effect of precursor solution concentration on the quality of ZnO nanorods grown on ITO/PET substrates by low-temperature solution method. We believe that our work will contribute to the realization of flexible organic-inorganic hybrid solar cell based on ZnO nanorods and conjugated polymer.

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Phosphorous and nitrogen are electrically active species at the SiO2/SiC interface in SiC MOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Both interfacial P and N are found to be resistant to buffered HF solution etching at the SiO2/SiC(0001) interface while both are completely removed from the SiO2/Si interface. The medium energy ion scattering results of etched phosphosilicate glass/SiC not only provide an accurate coverage but also indicate that both the passivating nitrogen and phosphorus are confined to within 0.5 nm of the interface. Angle resolved photoemission shows that P and N are likely situated in different chemical environments at the interface. We conclude that N is primarily bound to Si atoms at the interface while P is primarily bound to O and possibly to Si or C. Different interface passivating element coverages and bonding configurations on different SiC crystal faces are also discussed. The study provides insights into the mechanisms by which P and N passivate the SiO2/SiC(0001) interface and hence improve the performance of SiC MOSFETs.