2010
DOI: 10.1149/1.3360595
|View full text |Cite
|
Sign up to set email alerts
|

NMOS Narrow Width Devices Drive Current Improvements through STI Processes and Channel Implantation Optimization

Abstract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… Show more

Help me understand this report

This publication either has no citations yet, or we are still processing them

Set email alert for when this publication receives citations?

See others like this or search for similar articles