No Graphene Etching in Purified Hydrogen

Choubak, Saman; Biron, Maxime; Lévesque, Pierre L.; Martel, Richard; Desjardins, P.

doi:10.1021/jz400400u

Cited by 80 publications

(103 citation statements)

References 31 publications

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“…In the shrinkage process, the C atoms were considered to detach from the graphene lattice and to desorb from the substrate, which is affected by the reaction with residual oxygen in the system 46 . (Note: it was reported that an atomic hydrogen to etch graphene is not formed on Cu 47 .) The Arrhenius plots provided almost the similar E a values for growth and shrinkage.…”

Section: Resultsmentioning

confidence: 99%

Radiation-mode optical microscopy on the growth of graphene

Terasawa

Saiki

2015

Nat Commun

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Chemical vapour deposition (CVD) growth of graphene has attracted much attention, aiming at the mass production of large-area and high-quality specimens. To optimize the growth condition, CVD grown graphene is conventionally characterized after synthesis. Real-time observation during graphene growth enables us to understand the growth mechanism and control the growth more easily. Here we report the optical microscope observation of the CVD growth of graphene in real time by focusing the radiation emitted from the growing graphene, which we call 'radiation-mode optical microscopy'. We observe the growth and shrinkage of graphene in response to the switching on and off of the methane supply. Analysis of the growth feature reveals that the attachment and detachment of carbon precursors are the rate-determining factor in the CVD growth of graphene. We expect radiation-mode optical microscopy to be applicable to the other crystal growth at high temperatures in various atmospheres.

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Section: Resultsmentioning

confidence: 99%

Radiation-mode optical microscopy on the growth of graphene

Terasawa

Saiki

2015

Nat Commun

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“…1030 °C using CH 4 , H 2 and Ar process gases with the AB pellet holder positioned in a cold zone. The AB source was then moved to a position closer to the furnace for a pre-heating period, during which time the flow of dilute CH 4 feedstock was maintained in order to avoid etching of the hexagonal graphene template by hydrogen (or possibly by impurities present even in ultrahigh purity hydrogen 29 ) while the AB temperature rose to a steady state value of 60–70 °C to induce sublimation. 30 It was found that 2 min of pre-heating led to G-BN structures with a comparatively sharp and straight interface.…”

Section: Resultsmentioning

confidence: 99%

Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition

Han

Rodríguez–Manzo²,

Lee³

et al. 2013

ACS Nano

179

158

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Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene-boron nitride interface were restricted to microscopy of nano-domains. Here we report templated growth of single crystalline hexagonal boron nitride directly from the oriented edge of hexagonal graphene flakes by atmospheric pressure chemical vapor deposition, and physical property measurements that inform the design of in-plane hybrid electronics. Ribbons of boron nitride monolayer were grown from the edge of a graphene template and inherited its crystallographic orientation. The relative sharpness of the interface was tuned through control of growth conditions. Frequent tearing at the graphene-boron nitride interface was observed, so density functional theory was used to determine that the nitrogen-terminated interface was prone to instability during cool down. The electronic functionality of monolayer heterostructures was demonstrated through fabrication of field effect transistors with boron nitride as an in-plane gate dielectric.

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“…In either case, during CVD the presence of an oxidizing agent can positively affect the growing carbonaceous film by removing amorphous carbon phases and preferentially etching defects, as for carbon nanotubes [13]. By contrast, the presence of molecular oxygen, even in trace quantities, is detrimental as it leads to the etching of graphene [31]. In our perspective, the role of the oxygen should be further investigated since it might also play a role in speeding up the growth rate of graphene.…”

Section: Discussionmentioning

confidence: 99%