Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology

Алферов, Жорес Иванович

doi:10.1103/revmodphys.73.767

Cited by 304 publications

(151 citation statements)

References 66 publications

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“…Continuous advances in the fabrication of semiconductor structures and the development of experimental techniques and theoretical approaches keep bringing up fascinating new areas of research. On the side of applications, these structures, serving as a basis for the planar semiconductor technology, are of enormous importance for modern nano-and optoelectronics (Alferov, 2001;Kroemer, 2001).…”

Section: Introductionmentioning

confidence: 99%

Nonequilibrium phenomena in high Landau levels

et al. 2012

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Developments in the physics of 2D electron systems during the last decade revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance oscillations generated by the external forces that drive the electron system out of equilibrium. The rich set of dramatic phenomena of this kind, discovered in high mobility semiconductor nanostructures, includes, in particular, microwave radiation-induced resistance oscillations and zero-resistance states, as well as Hall field-induced resistance oscillations and associated zero-differential resistance states. The experimental manifestations of these phenomena and the unified theoretical framework for describing them in terms of a quantum kinetic equation are reviewed. This survey also contains a thorough discussion of the magnetotransport properties of 2D electrons in the linear-response regime, as well as an outlook on future directions, including related nonequilibrium phenomena in other 2D electron systems.

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Section: Introductionmentioning

confidence: 99%

Nonequilibrium phenomena in high Landau levels

et al. 2012

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“…Semiconductor quantum-dot (QD) microcavity devices offer many applications of strong current interest, such as lasers with improved emission properties and integrated sources of indistinguishable and entangled photons [1][2][3][4][5] . In contrast to atomic-like isolated emitters, QDs exhibit an interesting peculiarity: even if the QD emission lines are significantly detuned from the cavity resonance, photons can be emitted into the cavity mode.…”

mentioning

confidence: 99%

Coulomb-assisted cavity feeding in nonresonant optical emission from a quantum dot

et al. 2014

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Recent experiments have demonstrated that for a quantum dot in an optical resonator off-resonant cavity mode emission can occur even for detunings of the order of 10 meV. We show that Coulomb mediated Auger processes based on additional carriers in delocalized states can facilitate this far off-resonant emission. Using a novel theoretical approach for a non-perturbative treatment of the Auger-assisted quantum-dot carrier recombination, we present numerical calculations of the far offresonant cavity feeding rate and cavity mean photon number confirming efficient coupling at higher densities of carriers in the delocalized states. In comparison to fast Auger-like intraband scattering processes, we find a reduced overall efficiency of Coulomb-mediated interband transitions due the required electron-hole correlations for the recombination processes.PACS numbers: 78.67. Hc, 42.50.Ct Semiconductor quantum-dot (QD) microcavity devices offer many applications of strong current interest, such as lasers with improved emission properties and integrated sources of indistinguishable and entangled photons [1][2][3][4][5] . In contrast to atomic-like isolated emitters, QDs exhibit an interesting peculiarity: even if the QD emission lines are significantly detuned from the cavity resonance, photons can be emitted into the cavity mode. As a result of intense experimental and theoretical investigations, different mechanisms are discussed in the literature. Firstly, the interaction of QD excitons with acoustic phonons has been shown to provide efficient off-resonant cavity feeding for an energetic mismatch of few meV 6-10 . Secondly, when a QD can accommodate many single-particle bound states, the number of carrier configurations becomes quite large, and their Coulomb interaction results in a broad quasi-continuum of multiexcitonic transitions. Provided that these multi-exciton states are excited, their overlap with the cavity mode 11-13 allows for a Purcellenhanced photon production at larger detunings (∼ 10 meV away from the single exciton line). Also the role of the interaction with the wetting layer (WL) in the formation of this multiexcitonic spectral background was recognized 12 and Coulomb hybridization of QD bound states with the WL continuum was demonstrated 14,15 . In this letter, we quantify the role of Coulomb interaction with WL carriers for the off-resonant coupling of QD transitions to a cavity mode. Specifically, carriers in the WL can act as a thermal bath which compensate for the energy mismatch via Auger-like processes. We point out that this is an alternative mechanism to the Coulomb configuration interaction between carriers 12 , as we consider the role of the Coulomb interaction not in the spectrum but in the dynamics of the exciton recombination. Its effect in opening a kinetic channel is present even for QDs hosting very few confined states, and as a proof of principle, we evaluate it for a QD with single electron and hole levels.We find that optical interband transitions assisted by WL carriers via Coulo...

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“…Type I heterojunction, which is used for light emitting and laser applications, confines electrons and holes on one side of the semiconductor interface leading to greater charge recombination. On the other hand, charges favour separation naturally in type II heterojunction due to the band alignment [43][44][45] , therefore this is an advantage for solar cell [46][47][48][49] and water splitting applications 50, 51 . The solar cells that used III-nitrides as the active layer have been using the p-i-n structure [52][53][54] , where carrier recombination could lower the efficiency of the solar cell, the formation of Sc x Ga 1-x N/GaN type II heterojunction may be one solution to this problem.…”

Section: Resultsmentioning

confidence: 99%

Valence band offsets of Sc_xGa_1−xN/AlN and Sc_xGa_1−xN/GaN heterojunctions

Tsui¹,

Goff²,

Palgrave³

et al. 2016

J. Phys. D: Appl. Phys.

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The valence band offsets of Sc x Ga 1-x N/AlN heterojunction were measured by X-ray photoelectron spectroscopy (XPS) and were found to increase from 0.42 eV to 0.95 eV as the Sc content x increased from 0 to 0.15. The increase in valence band offset with increasing x is attributed to the corresponding increase in spontaneous polarisation of the wurtzite structure. The Sc x Ga 1-x N/AlN heterojunction is type I, similar to other III-nitride-based heterojunctions. The results also indicated that a type II staggered heterojunction, which can enhance spatial charge separation, could be formed if Sc x Ga 1-x N is grown on GaN.

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Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology

Cited by 304 publications

References 66 publications

Nonequilibrium phenomena in high Landau levels

Nonequilibrium phenomena in high Landau levels

Coulomb-assisted cavity feeding in nonresonant optical emission from a quantum dot

Valence band offsets of Sc_xGa_1−xN/AlN and Sc_xGa_1−xN/GaN heterojunctions

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Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology

Cited by 304 publications

References 66 publications

Nonequilibrium phenomena in high Landau levels

Nonequilibrium phenomena in high Landau levels

Coulomb-assisted cavity feeding in nonresonant optical emission from a quantum dot

Valence band offsets of ScxGa1−xN/AlN and ScxGa1−xN/GaN heterojunctions

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Product

Resources

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Valence band offsets of Sc_xGa_1−xN/AlN and Sc_xGa_1−xN/GaN heterojunctions