Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks

Kumar, Harshvardhan; Basu, Rikmantra

doi:10.1109/jsen.2018.2869975

Cited by 14 publications

(4 citation statements)

References 32 publications

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“…However, real HPTs consist of four major noise components, such as flicker (1/f ) noise, thermal noise and shot noise current components across the base-emitter and base-collector junctions [25]. Flicker noise dominates in the low-frequency region [13,26]. Therefore, we have neglected flicker noise in the present study to calculate D * and NEP of the device.…”

Section: Impact Of Number Of Qws On the Detectivity And Noise Equival...mentioning

confidence: 99%

“…During the last decade, many GeSn-based phototransistors have been reported; the spectral responsivity and small-signal current gain increases with Sn alloying, allowing the extension of the photodetection range to the mid-infrared (MIR) wavelength [13][14][15][16][17]. However, only a few works on GeSn HPTs are available that discuss the frequency performance of the device for high-speed applications [16,18].…”

Section: Introductionmentioning

confidence: 99%

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High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

Kumar

2021

Semicond. Sci. Technol.

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This work demonstrates high-performance vertical GeSn multiple quantum well (MQW) heterojunction phototransistors (HPTs) on Si substrates for short-wave infrared (SWIR) applications. Estimated results show a strong dependence on the number of QWs (N), incident optical power P in and capture parameter β . Enhanced carrier and gain confinement cause an increase in responsivity of the device with the QWs in the base layer. However, the frequency performance of the device degrades with more QWs due to the increased forward transit time. On the other hand, the 3 dB cut-off frequency f T is the highest for the lower value of β . In addition, the detectivity and responsivity of the device decrease with an increase in incident optical power due to the change in base potential. The calculated results show that the 3 dB cut-off f T and maximum operating frequency f max are > 18 GHz and > 0.147 THz , respectively for N = 1 at 300 K. The detectivity and noise equivalent power are ∼ 10 9 cm H z 1 / 2 / W and

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Section: Impact Of Number Of Qws On the Detectivity And Noise Equival...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

Kumar

2021

Semicond. Sci. Technol.

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“…On the other hand, the common-emitter (C-E)-based three-terminals (3-Ts) phototransistors (PTs) can provide extremely high responsivity (due to its internal current gain) and 3 dB bandwidth while being biased with low voltages [27][28][29]. To this extent, in recent years a few research groups have focused on the design and fabrication of vertical bipolar junction transistor (BJT)based GeSn heterojunction phototransistors (HPTs) [30][31][32][33][34][35]. Although, most of the earlier reported GeSn-based HPTs are designed for C-and L-bands of fiber-optic telecommunication [36,37].…”

Section: Introductionmentioning

confidence: 99%

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications

Kumar¹,

Chen²,

Tan³

2023

Semicond. Sci. Technol.

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This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the optical responsivity of the PTs. The proposed devices are investigated using multiphysics simulation. The designed PTs are investigated in terms of the Gummel and output characteristics under both dark and illumination, 3dB bandwidth, optical gain, and responsivity. The effect of lateral scaling on various figure-of-merits of PTs is also studied and in return, helps optimize the device structure to get the highest optical gain, responsivity, and 3-dB bandwidth at 2000 nm. The theoretically optimized PT achieves the maximum optical gain of 1650 and responsivity of about 308A/W at 2000 nm, with V_BE=0.3V and V_CE=1 V. In addition, the device exhibits a record-high 3-dB bandwidth of >55GHz. Thus, the encouraging electrical and optical performance of the proposed PT manifests it as a great potential candidate for the 2000 nm band.

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“…In addition, the proper selection of Sn concentrations in GeSn alloys causes a redshift in the cut-off wavelength because bandgap energy decreases with increasing Sn concentrations. Another potential advantage of using GeSn-based HPTs is that they have a high SNR [28] and low-voltage of operation compared to conventional III-V compound based PDs [33] and HPTs [34]. Therefore, GeSn-based HPTs are a viable alternative to conventional PDs for attaining high SR and a wide range of photodetection.…”

Section: Introductionmentioning

confidence: 99%

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

2020

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We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of Ge 1−x Sn x alloy in the base of our HPTs significantly shortens the emitter-to-collector transit time, leading to high cutoff frequency (f T) due to an increase in mobility. Furthermore, the Ge 1−x Sn x base extends the optical detection over a wide range (up to 2500 nm) due to the shrinkage of the bandgap energy caused by alloying with Sn. Additionally, spectral responsivity increases with Sn alloying due to the increased absorption coefficient. Our results show that f T and responsivity are strongly dependent not only on doping but also on temperature. The impact of temperature on the noise behavior of phototransistors was also analyzed for frequencies up to 100 GHz. As the temperature increased, the signal-to-noise ratio (SNR) decreased; however, spectral responsivity significantly improved. The high SNR, responsivity, and f T values of the GeSn HPT make it a potential candidate for future Si-based uncooled high-speed MIR photodetection.

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Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks

Cited by 14 publications

References 32 publications

High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

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