Noise in mixed tunneling avalanche transit time (MITATT) diodes

Dash, G. N.; Mishra, Jyotismita; Панда, А. К.

doi:10.1016/0038-1101(96)00054-8

Cited by 34 publications

(35 citation statements)

References 17 publications

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“…MITATT mode noise simulation scheme developed by Dash et al [11] is used to analyse the noise behaviour of the designed MITATT diodes. The computation starts by putting the noise source at the beginning of the generation region.…”

Section: Simulation Methodsmentioning

confidence: 99%

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Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Panda

Padhi

Dash

2016

International Journal of Microwave Science and Technology

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The potentials of GaN, SiC, and Si for application as microwave sources in mixed tunnelling avalanche transit time mode operation at submillimetre wave (sub-mm wave) frequency around 0.35 terahertz (THz) are investigated using some computer simulation methods. Design criteria to choose width, doping concentration, and area are highlighted. From the results of our simulation we observed that the Si diode produces the least power output of 41 mW followed by the GaN diode with 760 mW and the SiC diode with 2.89 W. In addition, the GaN diode has more noise than the SiC diode (by 5 dB) as well as the Si diode (by 10 dB). The drastically different performance between the GaN and the SiC diode is attributed to the incorporation of disparate carrier velocity in GaN which were not being used by other authors. In spite of the low power and high noise of the GaN compared to the SiC diode, the presence of several peaks in the mean square noise voltage curves and the existence of several minima in the noise measure curves would open a new direction in the design of GaN low-noise ATT diodes capable of multifrequency tuning like a DAR diode.

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Section: Simulation Methodsmentioning

confidence: 99%

“…The noise source is then shifted to the next space step and the process is repeated until it covers the whole generation region. Then the mean square noise voltage and the "noise measure" (NM) are determined following the approach described in [11].…”

Section: Simulation Methodsmentioning

confidence: 99%

Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Panda

Padhi

Dash

2016

International Journal of Microwave Science and Technology

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“…The high frequency analysis of the diode is carried out using a small signal simulation method described in [14]. The noise behaviour of MITATT device is computed using MITATT mode noise simulation scheme developed by Dash et al [16]. For this, the diode generation region is treated as consisting of a discrete number of noise generating sources ( ) x′ .…”

Section: Simulation Methodsmentioning

confidence: 99%

“…Finally, the mean square noise voltage and noise measure (NM) are calculated using the relations [16] ( ) ( )…”

Section: Simulation Methodsmentioning

confidence: 99%

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High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

Panda¹,

Padhi²,

Dash³

2014

WJNSE

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High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR MITATT diode (16%) is more than 4 times that of Si (flat) DDR MITATT diode (3.59%). In addition, a power output of more than 15 times from the SiC MITATT diode compared to the Si MITATT diode is commendable. A reduced noise measure of 17.71 dB from a low-high-low (lo-hi-lo) structure compared to that of 21.5 dB from a flat structure of SiC is indicative of the favourable effect of tunnelling current on the MITATT diode performance.

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Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics

Mukhopadhyay

Mukherjee²,

Acharyya³

et al. 2020

Emerging Trends in Terahertz Solid-State Physics and Devices

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Noise in mixed tunneling avalanche transit time (MITATT) diodes

Cited by 34 publications

References 17 publications

Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics

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