Noise parameter modeling of HEMTs with resistor temperature noise sources

Microwave noise modeling of FinFETs

“…24.6 R s (X) 10 Table 1, we report the obtained values of the equivalent circuit elements for a FinFET with V ds = 1 V and V gs = 0.8 V. It is worth noting that these values are inevitably affected by the sensitivity of the circuit element extraction to the S-parameter measurement uncertainties for the transistor and the associated dummy structures [27][28][29]. As highlighted in Ref.…”

“…Finally, a first order fitting is used for obtaining a smoother F 50 as a function of the square of the frequency (see Fig. 2) [4,6,8,10]. Fig.…”

“…In particular, the determination of the noise parameters has been simplified by exploiting the noise model based on expanding the small signal equivalent circuit with two equivalent noise temperatures, which are associated to the intrinsic input and output resistances [5,9]. Furthermore, Felgentreff et al have presented a resistor noise model taking into account also the equivalent noise temperature associated to the feedback resistance [8,[10][11][12]. In the present paper, we extend this resistor noise model to the FinFET case by accounting also for the equivalent noise temperature associated to the substrate resistance.…”

A novel extraction procedure to determine the noise parameters of on-wafer devices

“…Then, the evaluation of the equivalent temperatures T gs and T ds is often based on the use of a simulator matching the experimental data against the simulated performance. Guidelines for a meaningful determination of the equivalent noise temperatures have been offered [1], [5], [6], some [7] extending the mixed measurement-simulation approach to include the normalized equivalent temperature T gd of the gate-drain feedback admittance. This paper will introduce and validate for the first time a novel analytical approach [8] to the determination of the noise temperatures of the Pospieszalski model.…”

Noise behavior of a 15-GHz-AlGaAs/GaAs-HEMT-oscillator

“…The high frequency noise performance of the HFET is described by the model given in [4,5] which uses three uncorrelated white noise current sources ( Z N~~, INRR\, INRRd) allocated to the resistive elements of the intrinsic transistor. The parameters of these noise sources are determined from noise parameter measurements using the correlation matrix method.…”