Noise properties of an individual and two crossing multiwalled carbon nanotubes

Abstract

The noise properties at room temperature of multiwalled carbon nanotubes under forward bias, for frequencies between 10 Hz–10 kHz, have been investigated. The noise measurements were made for one individual multiwalled carbon nanotube (1 MW) and two crossing multiwalled carbon nanotubes (2 CMW). The excess noise found in 1 MW is consistently 1/f-like. However, 2 CMW shows higher noise level, and the noise spectrum has an unusual dependence on the current. The main origin of noise in 2 CMW was attributed to the diffusion noise.

Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

“…This may be one explanation for the previously observed excess noise in open-air nanotubes. 7 This noise exposes a major challenge to the potential application of carbon nanotubes in electronic devices and it suggests that effort is needed to reliably eliminate traps near the nanotube channel for low noise devices. Electron traps near the interface between the gate dielectrics and the nanotubes contribute most to the random telegraph noise.…”

“…[1][2][3][4][5] The inherent noise of such devices is important yet few studies have addressed noise issues, [6][7][8][9] and these have mainly focused on nanotubes in an "open-to-air" nonpassivated configuration. Here we report on electrical current fluctuations in passivated coaxial p-and n-type single-wall carbon nanotube ͑SWCNT͒ field-effect transistors ͑FETs͒.…”

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

“…In 2D-network devices consisting a large number of intersecting SWNTs confirmed the 2 V f scaling www.intechopen.com Carbon Nanotubes Applications on Electron Devices 280 of the LF noise. This behavior contrasts the scaling observed between two crossed MWNTs that deviate significantly from the 2 V f behavior (Ouacha et al, 2002). Using the 10 f  Hz noise it is plotted the scaled noise, 2 V A fSV  versus device resistance (Fig.…”

“…However, other mechanisms may also contribute to the 2MWNT noise, such as the forces between the two crossing CNTs which have consequences on the geometric structure of the CNTs. It is found that the noise in 2MWNT at higher frequencies is very close to the shot noise, which suggests the presence of an electrical barrier at the CNT-CNT junction (Ouacha et al, 2002). Peculiarities of noise have been registered in ultralow-power alcohol vapor sensors using MWCNTs (Sin et al, 2007).…”

“…Assuming weakly energydependent () DE , the examined samples in (Tarkiainen et al, 2005) reported for a MWNT (Ouacha et al, 2002). Appenzeller with coworkers reported a substantial noise reduction for a tube transistor with multiple carbon nanotubes in parallel ).…”