Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

Peng, Haibing; Hughes, M. E.; Golovchenko, Jene Andrew

doi:10.1063/1.2399942

Cited by 25 publications

(23 citation statements)

References 15 publications

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“…The energy difference ΔE n between the charge storage energy level E n and the Fermi level E f is expressed as ΔE n = E f −E n , which is modulated by the applied gate voltage V G . According to equilibrium statistical mechanics, P m+1 /P m is given by (13)…”

Section: Resultsmentioning

confidence: 99%

Single-Charge Sensitivity of Single-Walled Carbon Nanotube Multifunctional Quantum Transistor

2009

Sensors and Materials

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Single-walled carbon nanotube (SWNT) field-effect transistors show hysteresis in their electrical characteristics owing to the amorphous carbon around the carbon nanotube. Here, we show the reduction in the hysteresis characteristic by a refi ning process applied repeatedly to the carbon nanotube. Moreover, an SWNT multifunctional quantum transistor that shows a transition between resonant transistor (RTT) characteristics and single-hole transistor (SHT) characteristics with a change in applied gate voltage is developed. By fabricating a few charge storage units around the channel of a purifi ed SWNT multifunctional quantum transistor, an abrupt discrete switching of the source-drain current is observed, which corresponds to the single-charge transition between a storage unit and an SWNT. In addition, storage energy was controlled by adjusting applied bias.

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Section: Resultsmentioning

confidence: 99%

Single-Charge Sensitivity of Single-Walled Carbon Nanotube Multifunctional Quantum Transistor

2009

Sensors and Materials

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“…Therefore, the drastic increases of the drain current in Fig. 6(a) Moreover, the threshold voltage shift caused by single charge transition was given by ΔV thẽ / (C GI + C GNT ) [37][38][39][40][41], where C GI and C GNT was mutual capacitances of the top gate electrode and the charge storage dot and of the top gate electrode and the SWNT as shown in Fig. 6(c) C GI and C GNT were estimated to be C GI = 734 zF and C GNT = 20.7 zF, from the simulation by the finite element method, where conductor sphere of 1 nm diameter at 3 nm above the SWNT was assumed in the simulation as the single charge storage dot.…”

Section: Sample Preparationmentioning

confidence: 99%

“…A SWNT with a semiconductor property is very sensitive to the charge around the SWNT, because whole SWNT channel can be easily modulated by the arounded charge because of the small diameter of a SWNT. This high sensitivity can sense even a single-charge [9][10][11][12][13][14]. Therefore, many sensor applications of SWNT have been reported, e.g.…”

Section: Introductionmentioning

confidence: 99%

Control of Single-Hole Transition in Carbon Nanotube Transistor with Quantum Dot in Gate Insulator at Room Temperature

Kamimura¹,

Hayashi²,

Matsumoto³

2013

Physical and Chemical Properties of Carbon Nanotubes

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“…We suppose that the CNT channel is electrostatically doped due to negative charges trapped at the polymer/SiO 2 interface in the nanotube vicinity [1].…”

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Compact modeling of optically gated carbon nanotube field effect transistor

Liao¹,

Maneux²,

Pouget³

et al. 2010

Physica Status Solidi (b)

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BackgroundCarbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2,3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charge sensitivity, Optically-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) appears as a good candidate thanks to optical writing and electrical erasing abilities both with single and multiple drain current levels [5,6].By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT) over the nanotube, a CNTFET becomes an OG-CNTFET [5], as presented in Fig. 1a. Compared to the conventional CNTFET, the OG-CNTFET reveals a significant increase of the drain current below the threshold gate bias voltage. If this device is under significant powerful illumination, the gate bias will no longer control the conductivity of the CNT channel, and the optical gate will dominate the functionality. This property of variable conductance is of particular interest for neural network designs to define a third logic level. In this work, we present a compact model for OG-CNTFET. Indeed, compact modeling (i.e. SPICE-like) is a key issue for predicting the ultimate performances of these novel nano-devices in a circuit environment using standard simulation tools.Electron trapping/releasing mechanism When a thin film of P3OT coats on a CNTFET, this polymer acts as a p-type doping under no illumination condition [5]. We suppose that the CNT channel is electrostatically doped due to negative charges trapped at the polymer/SiO 2 interface in the nanotube vicinity [1].When an OG-CNTFET is under illumination with a wavelength that can be absorbed by the polymer, electron-hole pairs are generated in the P3OT layer, and a minor part of them can be separated [7]. This polymer is known for trapping only electrons [8]. If the gate is biased positively, these trapped electrons can be homogenously attracted by the electrostatic field to the P3OT/SiO 2 interface. The resulting charge density contributes to modulate the channel conductivity by screening the back gate bias. Fig. 1b describes this so-called optical gating effect. When the light is turned off, the trapped electrons are not released immediately; they are hold for about ten hours [5,7].The optical gating effect can be removed more rapidly by applying a negative gate voltage or a positive drain-source one [5-6, 9]. The negative gate bias provides an electrostatic field that contributes to release the trapped electrons at the P3OT/SiO 2 interface. Concerning the effect of the positive V ds , we assume that it creates an electric field close to the drain electrode that contributes to sweep away the trapped carriers according to the field magnitude distribution as a function of the distance to the drain electrode (c.f. Fig. 1c). Modeling of OG-CNTFETSince the OG-CNTFET...

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Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

Cited by 25 publications

References 15 publications

Single-Charge Sensitivity of Single-Walled Carbon Nanotube Multifunctional Quantum Transistor

Single-Charge Sensitivity of Single-Walled Carbon Nanotube Multifunctional Quantum Transistor

Control of Single-Hole Transition in Carbon Nanotube Transistor with Quantum Dot in Gate Insulator at Room Temperature

Compact modeling of optically gated carbon nanotube field effect transistor

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