Noise properties of SiGe heterojunction bipolar transistors

Regis, M.; Gruhle, A.; Mouis, M.; Llopis, Olivier; Escotte, L.; Graffeuil, J.; Plana, R.

doi:10.1109/smic.1998.750171

Cited by 8 publications

(1 citation statement)

References 20 publications

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“…A comparison between the noise performance of SiGe HBTs having 15% Ge content in the base and SiGe HBTs having 35%. Ge content shows that the latter exhibits a higher noise level (Two decades at 100Hz), this proves that it is difficult to increase the Ge content in the base without the introduction of dislocations [9].…”

Section: The Base Current Dependence Of Lowmentioning

confidence: 88%

Noise performance in strained Si heterojunction bipolar transistors

Fjer

Persson

Escobedo-Cousin

et al. 2011

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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In this paper, a study of the noise performance of strained Si Heterojunction Bipolar Transistors (sSi HBTs) is presented. This novel device exhibits low noise levels compared with Si Bipolar Junction Transistors (Si BJTs) and SiGe Heterojunction Bipolar Transistors (SiGe HBTs) for the same collector current, which can lower the noise in circuit applications. This performance benefit originates from the high current gain in sSi HBTs. However, the latter shows a higher noise level compared with the other devices at fixed base current. This is due to the presence of defects that are caused by the integration of a strained relaxed buffer used in the fabrication of sSi HBTs. The relationship between low frequency noise and defects has also been demonstrated using material characterisation.

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Section: The Base Current Dependence Of Lowmentioning

confidence: 88%