Noise Studies in Uniform Avalanche Diodes

Abstract

This Letter reports avalanche noise studies on microplasma-free guard-ring avalanche diodes. The low and high frequency approximations of Hines' theory are compared with experimental results at 1 kHz and 3 to 9 GHz, respectively. Good agreement is found between experiment and theory at both low and high frequencies. The open-circuit spectral voltage density is white up to the avalanche frequency ωa and decreases inversely with current. For ω ≫ ωa the spectral noise power density falls off with ω4.

Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz

“…The validity of our simulation method has been discussed elsewhere [9]. It may be noted that our earlier results have an excellent trend agreement with other theoretical results [12,13] and a general trend agreement with experimental results [14].…”

Mixed Tunnelling Avalanche Transit Time Mode Analysis of Flat Doping Profile Silicon Carbide Double Drift Region Diodes for Operation in W, D, Y and Thz Bands

“…Variation of mean square noise voltage per band width versus frequency plot in Fig. 3 agrees with the reports of Hines [20], Gummel and Blue [21] and Haitz and Voltmer [22]. At frequencies above the resonant frequency the negative resistance decreases rapidly and so also the noise voltage.…”

A complete system to generate electrical noise with arbitrary power spectral density

“…They are based on a technology that exploits a low capacitance diode, biased into avalanche breakdown with a constant current, to generate broadband noise. This technology has reached a high degree of advancement that allows matching a variety of applications [7][8][9]. Typically, these noise sources are sold as auxiliary modules of noise figure analyzers or performance spectrum analyzers.…”