Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts

Bartlett, Philip N.; Cook, David; Groot, C. H. de; Hector, Andrew L.; Huang, Ruomeng; Jolleys, Andrew; Kissling, Gabriela P.; Levason, William; Pearce, Stuart; Reid, Gillian

doi:10.1039/c3ra40739j

Cited by 47 publications

(56 citation statements)

References 57 publications

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“…24,25 The benefits of using these particular precursors are their high solubility in (non-coordinating) CH 2 Cl 2 and their accessible reduction potentials. 24,25 The benefits of using these particular precursors are their high solubility in (non-coordinating) CH 2 Cl 2 and their accessible reduction potentials.…”

Section: Resultsmentioning

confidence: 99%

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Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

et al. 2015

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We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is demonstrated by means of its application to deposit the technologically important ternary Ge/Sb/Te alloy, GST-225, for fabrication of nanostructured phase change memory (PCM) devices and the quality of the material is confirmed by phase cycling via electrical pulsed switching of both the nano-cells and thin films.

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Section: Resultsmentioning

confidence: 99%

“…24 Electrodeposition was performed on planar TiN substrates in order to provide a technologically relevant substrate. 24 Electrodeposition was performed on planar TiN substrates in order to provide a technologically relevant substrate.…”

Section: Electrochemical Characterisationmentioning

confidence: 99%

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

et al. 2015

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“…[N n Bu 4 ][SnCl 3 ] and [N n Bu 4 ][BiCl 4 ] were prepared as described in the literature . The salts were added to 1:2 molar ratio mixtures of choline chloride/ethylene glycol (12CE) prepared as previously described .…”

Section: Methodsmentioning

confidence: 99%

“…[1,3] Recently,t he electrodeposition of p-block elements, including bismuth and tin, from tetrabutylammonium chlorometalate salts of the elements in dichloromethane and in supercritical fluids was reported. [4,5] These reagents are crystalline solids, easy to handle, and not highly water or oxygen sensitive. Both tin and bismuth show straightforward redoxb ehavior in these electrolytes.…”

Section: Introductionmentioning

confidence: 99%

Tin, Bismuth, and Tin–Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents

et al. 2017

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The electrodeposition of tin, bismuth, and tin–bismuth alloys from SnII and BiIII chlorometalate salts in the choline chloride/ethylene glycol (1:2 molar ratio) deep eutectic solvent was studied on glassy carbon and gold by cyclic voltammetry, rotating disc voltammetry, and chronoamperometry. The SnII‐containing electrolyte showed one voltammetric redox process corresponding to SnII/Sn0. The diffusion coefficient of [SnCl3]−, detected as the dominating species by Raman spectroscopy, was determined from Levich and Cottrell analyses. The BiIII‐containing electrolyte showed two voltammetric reduction processes, both attributed to BiIII/Bi0. Dimensionless current/time transients revealed that the electrodeposition of both Sn and Bi on glassy carbon proceeded by 3D‐progressive nucleation at a low overpotential and changed to instantaneous at higher overpotentials. The nucleation rate of Bi on glassy carbon was considerably smaller than that of Sn. Elemental Sn and Bi were electrodeposited on Au‐coated glass slides from their respective salt solutions, as were Sn–Bi alloys from a 2:1 SnII/BiIII solution. The biphasic Sn–Bi alloys changed from a Bi‐rich composition to a Sn‐rich composition by making the deposition potential more negative.

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“…Surprisingly, ZnSe has never been prepared via electrodeposition from ILs even though the electrodeposition of Se in various ILs has been widely studied. [54][55][56][57][58][59][60][61] Many of these reports indicate that the deposition potential and temperature significantly affect the crystallinity of the Se deposits. In general, high temperature is advantageous to the formation of crystalline Se.…”

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Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Pai

Hsieh

et al. 2015

J. Electrochem. Soc.

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Ionic liquid zinc chloride-1-ethyl-3-methylimidazolium chloride (IL ZnCl 2 -EMICl) with a ZnCl 2 /EMICl ratio of 40/60 mol% was used as the electrolyte to study the voltammetric behavior of Se(IV) introduced into the IL as selenium chloride (SeCl 4 ) or selenium oxide (SeO 2 ). The electrodeposition of ZnSe was performed using constant-potential electrolysis at tungsten electrodes via a two-stage approach from the IL with and without SeO 2 . The nucleation mechanism of Se at the tungsten electrodes agrees better with the three-dimensional instantaneous nucleation than the progressive nucleation based on Sharifker's model. Crystalline Se and approximately stoichiometric crystalline ZnSe electrodeposits could be obtained from this system. The ZnSe films showed photoelectrochemical activity with a bandgap energy of ∼2.5 eV. According to the experiments of the dependence of the photocurrent on the applied potential, the ZnSe film was determined to be a p-type semiconductor with the flatband potential V FB of −0. Zinc selenide (ZnSe) is a II-VI semiconductor that belongs to the chalcogenide family. ZnSe is usually obtained as a n-type semiconductor with a wide bandgap (2.67-2.7 eV). p-type ZnSe, which is very likely due to excess Se in the deposits, has been prepared using electrodeposition.1 ZnSe has been reported to be a useful material for various optoelectronic devices, such as lightemitting devices, window layers for solar cells, photovoltaic cells, laser screens, film transistors, photoelectrochemical cells, and optical components for infrared lasers. 19,25 Compared with these approaches, electrodeposition is more attractive [26][27][28][29] in terms of convenience, cost, and suitability for the large-scale production of thin films. Moreover, the surface morphology, composition, and properties of semiconductors can be flexibly controlled by adjusting the operating parameters such as electrodeposition potential or current, potential waveforms (constant potential or pulse potential), concentration of precursors, temperature, and additives. Therefore, ZnSe has been widely prepared using electrodeposition, with mostly successful results. Most electrodepositions of ZnSe were carried out cathodically in acidic aqueous baths containing Zn(II) and SeO 2 . [30][31][32][33][34][35][36][37] In acidic solutions, SeO 2 dissolves to form H 2 SeO 3 . ZnSe has also been electrodeposited from alkaline aqueous baths. [38][39][40] In alkaline solutions, Zn(II) and SeSO 3 2− are most frequently used as the precursors, and complexing agents, such as EDTA, are usually needed for forming strong complex ions with Zn 2+ to prevent the chemical precipitation of ZnSe, which is produced from the reaction between Zn(II) and SeSO 3 2− . Few studies have electrodeposited ZnSe from nonaqueous baths such as dimethylsulfoxide [41][42][43] and molten salts (CaCl 2 -NaCl at 550• C). 44,45 In almost all recent studies and applications of ZnSe semiconductors, ZnSe has been prepared using electrodeposition from aqueous baths. [46][47][48] 28,29,[50]...

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Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts

Cited by 47 publications

References 57 publications

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Tin, Bismuth, and Tin–Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

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Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts

Cited by 47 publications

References 57 publications

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

Tin, Bismuth, and Tin–Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

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Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory