Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

Photoreflectance characterization of InP∕GaAsSb double-heterojunction bipolar transistor epitaxial wafers

“…The details of the growth of carbon-doped GaAsSb are described in our previous article. 7 As shown in Fig. 1.…”

High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

“…It has been reported that high quality InAlAs/GaAsSb heterostructure can be achieved much easier than InP/GaAsSb heterostructures [8]. Elegant deposition) method [9,10]. However it is very difficult to produce high quality InP/GaAsSb heterostructures by MBE (molecular beam epitaxy) so that InAlAs is a good candidate for emitter material especially for the GaAsSbbased HBTs grown by MBE.…”

Optical Characterization of Heavily Sn-Doped GaAs1-xSbx Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates

“…3,4) From the viewpoint of the wider applications of GaAsSb semiconductors, GaAsSb layers grown on GaAs substrates can be applied in data-communication lasers in the 1.3-1.5 mm wavelength range, 5) as well as in heterojunction bipolar transistors (HBT) with a GaAsSb base region. 6,7) In general, in III-V A V B -type alloyed crystals like GaAs 1Àx Sb x , the compositional control of V A and V B is more difficult than it is in III A III B -V-type alloys; therefore, the control of the doping of III-V A -V B alloys is much more difficult.…”