Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity

Blakey, Idriss; Chen, Lan; Goh, Yong Keng; Lawrie, Kirsten Jean; Chuang, Ya-Mi; Piscani, Emil C.; Zimmerman, Paul; Whittaker, Andrew K.

doi:10.1117/12.814076

Cited by 11 publications

(16 citation statements)

References 6 publications

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“…A post-exposure bake can accelerate polysulfone depolymerization. The 193 nm irradiation of polynorbornene sulfone [45] results in film thinning, reduced SO 2 content and E 0 of less than 50 mJ cm −2 , when developed in an isopropyl alcohol/cyclohexanone mixture. Successful non-CAR thin film materials must demonstrate enhanced ArF sensitivity, resolution and plasma etch resistance, while maintaining acceptable levels of LER.…”

Section: (I) Options For Extending 193 Nm Lithographymentioning

confidence: 99%

“…Recent increases in ArF immersion scanner speeds provide excess photons that may enable the re-evaluation of low-sensitivity resist materials, including non-CARs. Also, up to 7× sensitivity improvement can be realized by reducing poly(methyl methacrylate) (PMMA) film thickness to approximately 20 nm [45]. Polysulfones, which are more sensitive than PMMA, also were investigated for 193 nm immersion lithography applications.…”

Section: (I) Options For Extending 193 Nm Lithographymentioning

confidence: 99%

“…To increase sensitivity, glass transition temperature and etch resistance, linear polycarbonates with polysulfone backbones were evaluated and demonstrated initial resolutions of 35-50 nm lines/spaces, with low LER-increased sensitivity compared with PMMA [73]. Poly(1-butene sulfone) has been patterned with EUV photons, and this system has resolved 50 nm half-pitch patterns [74]. A key requirement for the successful implementation of non-CAR materials will be the demonstration of enhanced plasma etch resistance while maintaining good EUV sensitivity.…”

Section: (Iv) Extreme Ultraviolet Non-chemically Amplified Resist Matmentioning

confidence: 99%

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Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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Section: (I) Options For Extending 193 Nm Lithographymentioning

confidence: 99%

Section: (I) Options For Extending 193 Nm Lithographymentioning

confidence: 99%

Section: (Iv) Extreme Ultraviolet Non-chemically Amplified Resist Matmentioning

confidence: 99%

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Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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“…[27][28][29][30][31][32][33] An issue with this class of resists has been the poor sensitivity. [34] The next generation of excimer lasers have a more powerful laser source which will provide the capability to deliver significantly larger doses to the resist at current scan speeds.…”

Section: Introductionmentioning

confidence: 99%

Sensitive polysulfone based chain scissioning resists for 193nm lithography

et al. 2011

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Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.

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“…For chemically amplified resists (CARs) a number of causes have been attributed, but diffusion of photogenerated acids has been reported to be one of the most significant contributing factors [1][2][3]. Our strategy has been to remove acid diffusion from the equation by investigating non-chemically amplified resists (non-CARs) for 193nm and EUV lithography [4][5][6][7]. The mechanism by which these resists function is through a molecular weight solubility switch, i.e.…”

Section: Introductionmentioning

confidence: 99%

Polycarbonate based nonchemically amplified photoresists for extreme ultraviolet lithography

Blakey

Blinco

et al. 2010

SPIE Proceedings

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Some initial EUVL patterning results for polycarbonate based non-chemically amplified resists are presented. Without full optimization the developer a resolution of 60 nm line spaces could be obtained. With slight overexposure (1.4 x E 0 ) 43.5 nm lines at a half pitch of 50 nm could be printed. At 2x E 0 a 28.6 nm lines at a half pitch of 50 nm could be obtained with a LER that was just above expected for mask roughness. Upon being irradiated with EUV photons, these polymers undergo chain scission with the loss of carbon dioxide and carbon monoxide. The remaining photoproducts appear to be non-volatile under standard EUV irradiation conditions, but do exhibit increased solubility in developer compared to the unirradiated polymer. The sensitivity of the polymers to EUV light is related to their oxygen content and ways to increase the sensitivity of the polymers to 10 mJ cm -2 is discussed.

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Non-CA resists for 193 nm immersion lithography: effects of chemical structure on sensitivity

Cited by 11 publications

References 6 publications

Lithography for enabling advances in integrated circuits and devices

Lithography for enabling advances in integrated circuits and devices

Sensitive polysulfone based chain scissioning resists for 193nm lithography

Polycarbonate based nonchemically amplified photoresists for extreme ultraviolet lithography

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