Non-collinear magnetic states of Mn5Ge3 compound

Stroppa, Alessandro; Peressi, Maria

doi:10.1016/j.mssp.2006.08.057

Cited by 9 publications

(4 citation statements)

References 19 publications

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“…Similar T C enhancement (350 K) has been reported on strained Mn 5 Ge 3 thin films on GaAs(001) substrate . Also, it has been theoretically calculated that an increase on the cell volume produces a non‐collinear alignment of the magnetic moment of the Mn atoms, together with a high spin configuration . As expected, the increase on the volume of the Mn 5 Ge 3 cell on the nanoislands should be accompanied by a higher thermal stability of the Mn magnetic moments.…”

Section: Resultssupporting

confidence: 79%

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Olive-Méndez

Michez

Spiesser

et al. 2015

Phys. Status Solidi B

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We report on the epitaxial growth of Mn5Ge3 on Ge(001) by molecular beam epitaxy using solid phase epitaxy method. Mn5Ge3 grows as nanoislands, which are randomly distributed over the substrate surface. Select area electron diffraction analysis was used to determine the epitaxial relationship Mn5Ge3(001)[110]//Ge(001)[110], as well as to detect an induced tensile strain along [110] Mn5Ge3 direction to fit the Ge lattice, while the observation of Moiré patterns indicates a complete relaxation along the [11¯0] direction. In‐plane and out‐of‐plane M(H) loops were obtained at 200 K using a vibrating sample magnetometer, it was found that the easy axis of magnetization is perpendicular to the substrate surface and that the crystal magnetic anisotropy is K1 = 9.27 × 105 erg cm−3. The enhancement of the Curie temperature of the nanoislands ∼340 K, which is higher than 296 K of the bulk Mn5Ge3, is attributed to the induced strains.

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Section: Resultssupporting

confidence: 79%

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Olive-Méndez

Michez

Spiesser

et al. 2015

Phys. Status Solidi B

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“…The calculated total spin moment per Mn atom is 2.75 µ B , in agreement with previous calculations. 34,41,49,50 This value is slightly higher than the experimental one, i.e. 2.60 µ B .…”

Section: B Ge3mn5 a Test Materialsmentioning

confidence: 56%

X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling

Tardif

Titov

Arras

et al. 2014

Journal of Magnetism and Magnetic Materials

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X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L2,3 edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early ab initio studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L3 XMCD spectrum of Mn in Ge3Mn5, which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2p core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree-Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively.

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“…Polarized neutron diffraction studies on the spatial distribution of the magnetization density in Mn 5 Ge 3 revealed two crystallographically nonequivalent Mn sublattices, namely, Mn I and Mn II , with two distinctive magnetic moments of 1.96 μ B and 3.23 μ B , respectively . Density function calculations also suggested the coexistence of two energetically degenerate ferromagnetic states, collinear and noncollinear configurations, in the Mn 5 Ge 3 lattice, and the observed cusp in the d R /d T curves may be attributed to a possible magnetic transition between these two states. A similar scenario occurs in the antiferromagnetic Mn 5 Si 3 that has the same crystal structure as Mn 5 Ge 3 .…”

Section: Resultsmentioning

confidence: 89%

Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn₅Ge₃ Nanowire

et al. 2012

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In this Letter, the magnetic phase transition and domain wall motion in a single-crystalline Mn(5)Ge(3) nanowire were investigated by temperature-dependent magneto-transport measurements. The ferromagnetic Mn(5)Ge(3) nanowire was fabricated by fully germaniding a single-crystalline Ge nanowire through the solid-state reaction with Mn contacts upon thermal annealing at 450 °C. Temperature-dependent four-probe resistance measurements on the Mn(5)Ge(3) nanowire showed a clear slope change near 300 K accompanied by a magnetic phase transition from ferromagnetism to paramagnetism. The transition temperature was able to be controlled by both axial and radial magnetic fields as the external magnetic field helped maintain the magnetization aligned in the Mn(5)Ge(3) nanowire. Near the magnetic phase transition, the critical behavior in the 1D system was characterized by a power-law relation with a critical exponent of α = 0.07 ± 0.01. Besides, another interesting feature was revealed as a cusp at about 67 K in the first-order derivative of the nanowire resistance, which was attributed to a possible magnetic transition between two noncollinear and collinear ferromagnetic states in the Mn(5)Ge(3) lattice. Furthermore, temperature-dependent magneto-transport measurements demonstrated a hysteretic, symmetric, and stepwise axial magnetoresistance of the Mn(5)Ge(3) nanowire. The interesting features of abrupt jumps indicated the presence of multiple domain walls in the Mn(5)Ge(3) nanowire and the annihilation of domain walls driven by the magnetic field. The Kurkijärvi model was used to describe the domain wall depinning as thermally assisted escape from a single energy barrier, and the fitting on the temperature-dependent depinning magnetic fields yielded an energy barrier of 0.166 eV.

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Non-collinear magnetic states of Mn5Ge3 compound

Cited by 9 publications

References 19 publications

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling

Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn₅Ge₃ Nanowire

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Non-collinear magnetic states of Mn5Ge3 compound

Cited by 9 publications

References 19 publications

Epitaxial growth of strained Mn5Ge3nanoislands on Ge(001)

Epitaxial growth of strained Mn5Ge3nanoislands on Ge(001)

X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling

Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn5Ge3 Nanowire

Contact Info

Product

Resources

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Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Epitaxial growth of strained Mn₅Ge₃nanoislands on Ge(001)

Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn₅Ge₃ Nanowire