Non-contact fast wafer metrology for ultra-thin patterned wafers mounted on grinding and dicing tapes

Walecki, W. J.; Suchkov, V.; Van, Phuc; Lai, Kevin; Pravdivtsev, Alexander; Mikhaylov, Georgy; Lau, S. H.; Koo, Ann

doi:10.1109/iemt.2004.1321683

Cited by 11 publications

(12 citation statements)

References 3 publications

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“…Before we discuss in detail origin and method of overcoming these limitations let us recall briefly basic principle of low coherence interefromery. Figure 1 represents a single probe Michelson interferometer similar to that used described earlier [2], [7]. Light emitted by a light source LS is transmitted to and split into two portions by a single mode optical fiber to a 2x2 coupler BS.…”

Section: Introductionmentioning

confidence: 99%

“…In recent three years low coherence fiber optic interferomtery originally developed primarily for biomedical applications [1] became mainstream method for measurement of thickness of wafers for back-end main stream slicon manufacturing [2][3][4]. Low coherence fiber optic interferometer tools allow accurate measurements of thin, and ultrathin wafers mounted on dicing and grinding tapes [2].…”

Section: Introductionmentioning

confidence: 99%

“…Low coherence fiber optic interferometer tools allow accurate measurements of thin, and ultrathin wafers mounted on dicing and grinding tapes [2]. High speed version this technology was recently demonstrated to have potential for in-situ measurements during wafer thinning and wafer grinding process [5].…”

Section: Introductionmentioning

confidence: 99%

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Combined low-coherence interferometry and spectrally resolved reflectometry for nondestructive characterization of small-diameter high-aspect ratio micro-fabricated and micro-machined structures and multilayer membranes

Walecki¹,

Azfar²,

Pravdivstev³

et al. 2006

Micromachining and Microfabrication Process Technology XI

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We propose novel tool employing both low coherence interferometer and spectrally resolved reflectometer sensor. We discuss application of this novel tool for measurements of the narrow high aspect ratio structures. We demonstrate that the visible reflectance spectrum of such structures allows us to extend range of interferometer to measure depth trenches with diameter from 2 µm to 1 mm, with reproducibility 10 nm -100 nm depending on range of the thin film thickness. We also present of this novel tool for measurement of ultra-thin coated pressure sensor membranes. Application of an auxiliary spectral reflectometer allows correcting for systematic errors of low coherence interferometer which can be as large as 1.5 -2 µm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Combined low-coherence interferometry and spectrally resolved reflectometry for nondestructive characterization of small-diameter high-aspect ratio micro-fabricated and micro-machined structures and multilayer membranes

Walecki¹,

Azfar²,

Pravdivstev³

et al. 2006

Micromachining and Microfabrication Process Technology XI

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show abstract

“…1, [2,[7][8][9][10][11]. It is a fiber optic implementation of low coherence Michelson interferometer [2].…”

Section: Introductionmentioning

confidence: 99%

Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices

Walecki

Lai

Souchkov

et al. 2005

phys. stat. sol. (c)

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289 (1996) [2]). Purpose of this paper is to present an extension of this method to characterisation of ultra-thin compound wide bandgap wafers mounted on insulating carriers. We present alternative technique, which does not suffer from above discussed limitations, and can be easily integrated in the production tools, and provide accurate measurement of samples while they are being processed. IntroductionThe metrology of thin (0.1-0.2 mm) and ultra-thin (below 0.1 mm) semiconductor compound materials wafers has been identified very early as one of the technology gaps of the industry. The most commonly employed metrologies include capacitance and air pressure techniques. These two competing technologies have been proven to be reliable and quite accurate solutions for measurement of thickness, bow, warp and related parameters in relatively thick and well conducting materials.

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“…Low coherence optical interferometry [1] has been proven to be an effective tool for characterization of thin and ultra-thin semiconductor silicon [2], [3], [4], compound semiconductor wafers [5], and MicroElectro-Mechanical Systems (MEMS) structures [6] - [10].…”

Section: Introductionmentioning

confidence: 99%

Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Novel Materials and Structures

Walecki¹,

Pravdivtsev²,

Lai³

et al. 2005

AIP Conference Proceedings

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Non-contact fast wafer metrology for ultra-thin patterned wafers mounted on grinding and dicing tapes

Cited by 11 publications

References 3 publications

Combined low-coherence interferometry and spectrally resolved reflectometry for nondestructive characterization of small-diameter high-aspect ratio micro-fabricated and micro-machined structures and multilayer membranes

Combined low-coherence interferometry and spectrally resolved reflectometry for nondestructive characterization of small-diameter high-aspect ratio micro-fabricated and micro-machined structures and multilayer membranes

Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices

Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Novel Materials and Structures

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