Non-degenerate four-wave mixing in an optically injection-locked InAs/InP quantum dot Fabry–Perot laser

Abstract

Non-degenerate four-wave mixing in an InAs/InP quantum dot Fabry–Perot laser is investigated with an optical injection-locking scheme. Wavelength conversion is obtained for frequency detunings ranging from +2.5 THz to −3.5 THz. The normalized conversion efficiency is maintained above −40 dB between −1.5 and +0.5 THz with an optical signal-to-noise ratio above 20 dB and a maximal third-order nonlinear susceptibility normalized to material gain of 2 × 10−19 m3/V2. In addition, we show that injection-locking at different positions in the gain spectrum has an impact on the nonlinear conversion process and the symmetry between up- and down- converted signals.

Thermally insensitive determination of the chirp parameter of InAs/GaAs quantum dot lasers epitaxially grown onto silicon

“…In particular, direct epitaxial growth of GaAs layers onto silicon with InAs QDs as gain media has been proved to be a meaningful solution for inexpensive and monolithically integrated silicon light emitters [4,5]. In semiconductor lasers, the α-factor is a key parameter resulting from the phase-amplitude coupling effect, and driving the spectral linewidth [3], the sensitivity to optical feedback [6,7], the nonlinear dynamics under optical injection [8] and four-wave mixing generation [9]. The α-factor typically describes the coupling between the carrierinduced variation of real and imaginary parts of susceptibility and is defined as […”

Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics

“…In recent years, low‐dimensional structures have raised intense interests in the fields of optoelectronics . For instance, InAs quantum dots (QDs) will produce 3D confinements for the electrons and holes when they are embedded in materials with wider band gaps, usually, GaAs .…”

“…In recent years, low-dimensional structures have raised intense interests in the fi elds of optoelectronics. [1][2][3][4][5][6][7][8][9][10][11][12] For instance, InAs quantum dots (QDs) will produce 3D Particularly, InAs QDs grown on GaAs (311)B exhibit high size uniformity and narrow low-temperature photoluminescence (PL) emission peaks. Compared with the QDs grown on GaAs (311) substrates, the growth processes of InAs QDs on GaAs (511) substrates have seldom been studied.…”

Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

“…The experimental procedure for retrieving the a H -factor is fully detailed elsewhere. 24 Figure 2 in Fig. 2 is only valid for the FP laser which does not suffer from strong LSHB.…”

“…The material a H -factor is extracted from the amplified spontaneous emission (ASE). 24 To do so, a FP cavity is considered because the ASE method is not easily applicable to DFB lasers for which the grating makes the gain extraction more complicated. The experimental procedure for retrieving the a H -factor is fully detailed elsewhere.…”