Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Goyal, Anshu; Yadav, B. S.; Raman, R.; Kumar, Anand; Dalal, Sandeep; Tyagi, Renu; Kumar, Vikram; Kapoor, A. K.

doi:10.1016/j.jlumin.2020.117834

Cited by 6 publications

(14 citation statements)

References 40 publications

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“…The YL peak position shows a blue shift of 130 meV compared to the commonly observed YL energy postion of GaN at 2.2 eV 22 , 47 . This is in agreement with findings reported by Goyal et al 22 .…”

Section: Resultssupporting

confidence: 92%

“…Yet, this blue shift is proportional to the Al composition in AlGaN. A blue shift of the YL peak position of about 90 nm (400 meV) and 109 nm (500 meV) is observed for AlGaN layers with Al composition of about 26% and 30%, respectively 22 . Thus, the YL observed in the present work at 2.33 eV is attributed to the AlGaN layer.…”

Section: Resultssupporting

confidence: 45%

“…22,47 The macroscopic nature of this acceptor level has been the subject of several scientific works. 22,48 Dislocations, isolated points defects and/or point defect-related complexes have been suggested to be the origin of this deep acceptor level responsible for the YL emission in (Al)GaN. Macht et al 49 have reported that the YL is more related to point defects rather than dislocations.…”

Section: θ (Deg)mentioning

confidence: 99%

“…Yet, the performance of AlGaN-based devices has been limited by some challenging issues connected to the AlGaN layer quality, 4 , 8 , 22 e.g., the relatively low internal quantum efficiency, the poor p-type doping efficiency, and hardly achievable n- and p-type good ohmic contacts 8 , 23 . The primary factor responsible for the issues mentioned above is the presence of high dislocation and point-defect densities in the AlGaN epilayer due to heteroepitaxy on foreign substrates 4 , 15 .…”

Section: Introductionmentioning

confidence: 99%

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Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

et al. 2022

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The size and density of nanopits, generated at the surface of their top layer, strongly affect the electrical and optical properties of AlGaN-based structures. Therefore, the control of the layer quality evolution as a function of the nanopits size/density is a crucial issue to enhance the device performance. In this paper, the effects of the nanopits diameter observed at the surface of AlGaN on carrier dynamics are systematically investigated. The variation of nanopits diameter is achieved through thermal annealing of a set of AlGaN/GaN heterostructures at different temperatures. The samples are characterized using the scanning electron microscope (SEM), energy-dispersive x-ray, high-resolution x-ray diffraction, photoluminescence (PL), and timeresolved PL spectroscopies. SEM images have revealed an increase in the nanopits diameter with increasing annealing temperature. In addition, we observed a linear development in the yellow luminescence intensity, accompanied by a deterioration in the PL decay times due to an increase in the density of point-defect complexes that act as nonradiative recombination centers. We also performed temperature-dependent PL measurements to study the impact of the nanopits diameter on electron-phonon scattering processes. Both electron-acoustic-and electron-longitudinal optical phonon interactions enhance with increasing nanopits diameter.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 45%

Section: θ (Deg)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

et al. 2022

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“…GaN- and SiC-based power devices are increasingly replacing silicon power devices in many applications, despite their higher cost and limited material availability. Materials with a higher bandgap, on the other hand, are being investigated to extend the power and breakdown voltage limits, as shown in Figure a. − …”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure

Kaneriya

Karmakar

Sahu

et al. 2023

Microelectronics Journal

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Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Cited by 6 publications

References 40 publications

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure

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Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Cited by 6 publications

References 40 publications

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure

Contact Info

Product

Resources

About

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications