Non-destructive imaging of buried electronic interfaces using a decelerated scanning electron beam

Hirohata, Atsufumi; Yamamoto, Yasuaki; Murphy, Benedict Andrew; Vick, Andrew

doi:10.1038/ncomms12701

Cited by 16 publications

(7 citation statements)

References 21 publications

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“…On the other hand, our recently developed non-destructive imaging method can be performed by controlling the acceleration voltage in scanning electron microscopy (SEM) without modifying a sample and a device [ 2 ]. This method achieves a high in-plane resolution of a few nm without any additional requirements of sample preparation for imaging.…”

Section: Introductionmentioning

confidence: 99%

Non-Destructive Imaging on Synthesised Nanoparticles

et al. 2021

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Our recently developed non-destructive imaging technique was applied for the characterisation of nanoparticles synthesised by X-ray radiolysis and the sol-gel method. The interfacial conditions between the nanoparticles and the substrates were observed by subtracting images taken by scanning electron microscopy at controlled electron acceleration voltages to allow backscattered electrons to be generated predominantly below and above the interfaces. The interfacial adhesion was found to be dependent on the solution pH used for the particle synthesis or particle suspension preparation, proving the change in the particle formation/deposition processes with pH as anticipated and agreed with the prediction based on the Derjaguin–Landau–Verwey–Overbeek (DLVO) theory. We found that our imaging technique was useful for the characterisation of interfaces hidden by nanoparticles to reveal the formation/deposition mechanism and can be extended to the other types of interfaces.

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Section: Introductionmentioning

confidence: 99%

Non-Destructive Imaging on Synthesised Nanoparticles

et al. 2021

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“…An understanding and ultimate improvement of the performance of these devices requires a detailed understanding of physical and chemical process of ion- and electron-transfer occurring at interfaces between phases, e.g., ion insertion kinetics into lithium-ion battery electrodes and electrocatalysis at fuel-cell electrodes. For interfaces between two solids, e.g., the electrode/electrolyte interface in an all-solid-state battery, − or the electrode/electrocatalyst/membrane interface in a fuel cell, there are only few methods of characterization available, such as transmission electron microscopy (TEM), X-ray computed tomography, and neutron reflectometry. − Moreover, these methods typically require a costly and potentially damaging or perturbative high-energy radiation source and do not directly report the electrochemical activity but infer it from other properties . Structural deformation and compositional variation, which affect ions dynamics and kinetics of the entire device occur at nanoscale length scales, requiring an in situ characterization technique to provide this resolution.…”

Section: Introductionmentioning

confidence: 99%

Visualization of Hydrogen Evolution at Individual Platinum Nanoparticles at a Buried Interface

et al. 2020

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Electrochemical processes occurring at solid/solid and solid/membrane interfaces govern the behavior of a variety of energy storage devices, including electrocatalytic reactions at electrode/membrane interfaces in fuel cells and ion insertion at electrode/electrolyte interfaces in solid-state batteries. Due to the heterogeneity of these systems, interrogation of interfacial activity at nanometer length scales is desired to understand system performance, yet the buried nature of the interfaces makes localized activity inaccessible to conventional electrochemical techniques. Herein, we demonstrate nanoscale electrochemical imaging of hydrogen evolution at individual Pt nanoparticles (PtNPs) positioned at a buried interface using scanning electrochemical cell microscopy (SECCM). Specifically, we image the hydrogen evolution reaction (HER) at individual carbon-supported PtNP electrocatalysts covered by a 100 to 800 nm thick layer of the proton exchange membrane Nafion. The rate of hydrogen evolution at PtNP at this buried interface is shown to be a function of Nafion thickness, with the highest activity observed for ∼200 nm thick films.

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“…In this study, we have demonstrated chemical analysis alongside decelerated electron-beam imaging for buried magnetic tunnel junctions (MTJs) to reveal the origin of the reduction in tunnelling magnetoresistance (TMR) ratios for some of the MTJs. We have recently developed a new non-destructive method to image buried junctions using a decelerated electron-beam 5 . By using a precisely controlled beam we have managed to image MTJs below an 80-nm-thick Au electrode, allowing a correlation between the junction images and their magnetic transport properties to be made.…”

Section: Introductionmentioning

confidence: 99%

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Jackson

Sun

Kubota

et al. 2018

Sci Rep

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Current information technology relies on the advancement of nanofabrication techniques. For instance, the latest computer memories and hard disk drive read heads are designed with a 12 nm node and 20 nm wide architectures, respectively. With matured nanofabrication processes, a yield of such nanoelectronic devices is typically up to about 90%. To date the yield has been compensated with redundant hardware and software error corrections. In the latest memories, approximately 5% redundancy and parity bits for error corrections are used, which increase the total production cost of the devices. This means the yield directly affects the device costs. It is hence critical to increase the yield in nanofabrication. In this paper, we have applied our recently developed method to image buried interfaces in combination with chemical analysis to evaluate magnetic tunnel junctions and have revealed their different magnetoresistance ratios caused by the presence of materials formed at the junction edges. The formation of these materials can be avoided by optimising the junction patterning process to remove residual carbon introduced from resist. Our imaging method with chemical analysis have demonstrated a significant potential for the improvement of junction performance, resulting in higher yields. This can be used as a quality assurance tool in a nanoelectronic device production line.

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Non-destructive imaging of buried electronic interfaces using a decelerated scanning electron beam

Cited by 16 publications

References 21 publications

Non-Destructive Imaging on Synthesised Nanoparticles

Non-Destructive Imaging on Synthesised Nanoparticles

Visualization of Hydrogen Evolution at Individual Platinum Nanoparticles at a Buried Interface

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

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