Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a B2-ordered phase. The saturation magnetization is 380 emu/cm 3 , almost the same as the value given by the Slater-Pauling-like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature-and bias-voltagedependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of B2ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the Y -ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

We studied magnetic tunnel junctions (MTJs) with a MgO(001) barrier and metastable bcc Co3Mn(001) disordered alloy electrodes. A tunnel magnetoresistance (TMR) ratio was approximately 200%–250% observed at room temperature. We successfully observed the TMR ratio greater than 600% at 10 K which was higher than the past reported value of MgO-based MTJs with ultrathin bcc Co(001) electrodes. However, our experimental value was still much lower than the past theoretical prediction in bcc Co/MgO/Co(001) MTJs. We discuss some differences in the bulk band structure affecting the TMR effect for bcc Co and bcc Co3Mn.

Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Néel temperature (TN) but, to have a stable AF configuration, it is necessary that the material have a sufficient level of anisotropy so as to maintain the orientation of the given magnetic state fixed in one direction. Unlike the case for ferromagnets there is little established data on the anisotropy of AFs and in particular its origins and those factors which control it. In this paper these factors are reviewed in the light of recent and established experimental data. Additionally, there is no recognized technique for the first principle's determination of the anisotropy of an AF which can only be found indirectly via the exchange bias phenomenon. This technique is reviewed and in particular the implications for the nature of the anisotropy that is measured and its distribution. Finally, a strategy is proposed that would allow for the development of AF materials with controlled anisotropy for future applications.

In this work, we describe an alternative strategy for the development of heat assisted magnetic recording media. In our approach, the need for a storage material with a temperature dependent anisotropy and to provide a read out signal is separated so that each function can be optimised independently. This is achieved by the use of an exchange bias structure where a conventional CoCrPt-SiO2 recording layer is exchange biased to an underlayer of IrMn such that heating and cooling in the exchange field from the recording layer results in a shifted loop. This strategy requires the reorientation of the IrMn layer to allow coupling to the recording layer. This has been achieved by the use of an ultrathin (0.8 nm) layer of Co deposited beneath the IrMn layer. In this system, the information is in effect stored in the antiferromagnetic layer, and hence, there is no demagnetising field generated by the stored bits. A loop shift of 688 Oe has been achieved where both values of coercivity lie to one side of the origin and the information cannot be erased by a magnetic field.