2006
DOI: 10.1016/j.tsf.2006.02.073
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Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers

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Cited by 42 publications
(24 citation statements)
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“…Then, as XES allows probing into the chemical environment of the emitting atoms, the interface composition of the Al/Ni multilayers is determined from the analysis of their XES spectra. These, in turn, are fitted as a weighted sum of reference spectra (with the constraint that a minimum number of references is introduced), this methodology being now routinely used to study complex materials [23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%
“…Then, as XES allows probing into the chemical environment of the emitting atoms, the interface composition of the Al/Ni multilayers is determined from the analysis of their XES spectra. These, in turn, are fitted as a weighted sum of reference spectra (with the constraint that a minimum number of references is introduced), this methodology being now routinely used to study complex materials [23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%
“…40 The energy of atoms deposited from the thermal sources is low (0.1-0.2 eV) that is why the formation of lower silicides could be expected for such deposition methods. However it was shown by Maury et al 42 that in sputter-deposited Mo/Si MXM (the energy of Mo-atoms is at least one order of magnitude higher compared to that for thermal evaporation) the Mo 5 Si 3 silicide is formed at Mo-on-Si interfaces. From the data reported in the literature it is possible to trace a tendency of appearing Sienriched silicides as the energy released at interfaces increases.…”
Section: Discussionmentioning
confidence: 99%
“…Moreover, in the case of periodic stacks, the reflectivity increases much more rapidly with the number of periods [28]. It has also been demonstrated that the addition of thin B 4 C 'barrier' layers in Mo/Si multilayers reduces the formation of molybdenum silicides, and produces more ideal interfaces [29][30][31]. In our optimisation procedure, we decided to set the minimum thickness of each B 4 C layer to 0.3 nm in order to take advantage of this 'barrier' layer effect.…”
Section: Designmentioning
confidence: 99%