Non-equilibrium carrier capture, recombination and annealing in thick insulators and their impact on radiation hardness

Abstract

This paper describes an approach to prediction of the thick insulators' radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and electric field magnitudes. Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed within a framework of the rate-equation-based mathematical model. It was shown that the precursor trap in the thick insulating oxides can be important at high dose rates. It was also shown that full filling of the shallow hole traps in the insulating oxide bulk can cause suppression of dose-rate sensitivity at relatively high dose rates, especially in thick insulators.

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

“…In fact, only E ox and F ot were varied as fitting parameters in Table A1. The basic physical parameter that determines the temperature dependence of the charge yield experimentally found in [11] ( p   0.39 eV) has been successfully used to describe radiation-induced degradation in different devices [10][11][12][13]20].…”

Research for radiation-hardened high-voltage SOI LDMOS

“…As critical components, lateral double-diffusion MOSFETs (LDMOS) play an important role in analog switches and high voltage driver ICs applied to space and military electronic systems such as spacecraft and satellites, which shows a strong sensitivity to ionizing radiation [1][2][3] . The generation of charges by ionizing radiations in CMOS materials may induce stable defects in dielectrics [4][5][6] used in the fabrication process. According to Refs.…”