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This paper describes an approach to prediction of the thick insulators' radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and electric field magnitudes. Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed within a framework of the rate-equation-based mathematical model. It was shown that the precursor trap in the thick insulating oxides can be important at high dose rates. It was also shown that full filling of the shallow hole traps in the insulating oxide bulk can cause suppression of dose-rate sensitivity at relatively high dose rates, especially in thick insulators.

-This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator -conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superposition of the responses of different defects with different time constants. Using this linear response function, a number of important practical problems are analyzed and discussed. Combined tunnel and thermal or RICN annealing, power-like temporal relaxation after a single ion strike into the gate oxide, are described in context of general approach.

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