Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions

Зебрев, Г. И.; Petrov, Alexander S.; Useinov, Rustem G.; Ikhsanov, R. Sh.; Ulimov, V.N.; Anashin, Vasily S.; Elushov, I V; Drosdetsky, Maxim G.; Galimov, Artur M.

doi:10.1109/tns.2014.2315672

Cited by 19 publications

(7 citation statements)

References 23 publications

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“…We attributed such behavior to the dependence of the charge yield on dose rate. The physical model of this effect has been developed and validated in a series of the works [10,11,12,13]. A synopsis of this model is presented in the Appendix.…”

Section: Calibration Tests Of the Dosimetersmentioning

confidence: 99%

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Zimin

Mrozovskaya

Chubunov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs' sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.

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Section: Calibration Tests Of the Dosimetersmentioning

confidence: 99%

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Zimin

Mrozovskaya

Chubunov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…Thyristors are current controlled devices with two low-doped regions (p-and n-type). Although these devices are harder in terms of ionization damage, the fast degradation of the low-doped regions because of the non-ionizing radiation [15] make not advisable their use. In this context, the IMB-CNM has proposed a new Vertical JFET (V-JFET) transistor based on a 3D deep trenched technology [16] implemented on p-type substrates to minimize the displacement damage at high radiation fluences.…”

Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A New Vertical JFET Power Device for Harsh Radiation Environments

et al. 2017

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An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.

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“…This approximation is justified only at relatively low doses. The high dose conditions generally require a numerical self-consistent consideration [31]. The linearity condition makes it easy to get the exact analytical solution of Eq.…”

Section: B Generic Form Of Tunnel Relaxation Response Functionmentioning

confidence: 99%

“…14b. To avoid misunderstanding, it should be emphasized that the tunnel annealing is a typical time-dependent effect, and it does not belong to the class of the true dose-rate effects such as the ELDRS [34]. The difference in slope of the quasi-linear dose curves at different dose rates in Fig.…”

Section: E Steady-state Irradiationmentioning

confidence: 99%

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

Зебрев

Drosdetsky

2016

IEEE Trans. Nucl. Sci.

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-This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator -conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superposition of the responses of different defects with different time constants. Using this linear response function, a number of important practical problems are analyzed and discussed. Combined tunnel and thermal or RICN annealing, power-like temporal relaxation after a single ion strike into the gate oxide, are described in context of general approach.

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Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions

Cited by 19 publications

References 23 publications

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

A New Vertical JFET Power Device for Harsh Radiation Environments

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

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