Non-equilibrium impurity redistribution in Si

Buzynin, A. N.; Luk’yanov, A. E.; Осико, В. В.; Voronkov, V. V.

doi:10.1016/s0168-583x(01)00882-5

Cited by 12 publications

(6 citation statements)

References 4 publications

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“…The suggested model and kick-out mechanism of the process [5] were found to be in agreement with the experimental data obtained (Figure 2(b)). …”

Section: Environment-friendly Low-temperature Technique Of Formation supporting

confidence: 88%

“…In our studies [5] a model of this phenomenon has been suggested. The observed effect of both formation and propagation of n-type regions in the irradiated boron-doped p-Si provided an evidence of domination of a powerful selfinterstitial flux, which is directed from the very thin defected layer into the sample bulk and causes the displacement of boron into an interstitial position.…”

Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 89%

“…Generation of thermal donors also influences this process. According to the model [5] the formation of n-type region in Ar-irradiated samples of p-Si is caused by the boron acceptor loss due to self-interstitials produced at the front the surface of Si sample by Ar flux. The mechanism of acceptor loss probably involves reaction of boron atoms with self-interstitials (a kick-out reaction).…”

Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 99%

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Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Buzynin¹,

Buzynin²,

Шенгуров³

et al. 2017

GSC

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In the present paper, some novel opportunities for the development of highefficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside; 2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 − 2) × 10 5 cm −2 density of the threading dislocation in the GaAs layer. 218shown to be suitable for the use as an ideal antireflecting material with high protective and anticorrosive properties.

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“…The suggested model and kick-out mechanism of the process [5] were found to be in agreement with the experimental data obtained (Figure 2(b)). …”

Section: Environment-friendly Low-temperature Technique Of Formation supporting

confidence: 88%

Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 89%

Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 99%

See 1 more Smart Citation

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Buzynin¹,

Buzynin²,

Шенгуров³

et al. 2017

GSC

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“…A proposed mechanism of this process consists mainly in the following [64]. The irradiation of the sample by inert ions generates a flux of silicon interstitial atoms Si I directed from a surface in the bulk of the sample.…”

Section: Modelmentioning

confidence: 99%

Fianite in Photonics

Buzynin¹

2012

Advanced Photonic Sciences

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“…Up to now, there have been several accepted points of view on this topic. (i) Transfer of substitutional boron atoms (acceptor) into the electrically inactive interstitial position by the generated interstitial silicon atoms, known as the kick-out mechanism [12]. However, this can only explain the loss of an acceptor and cannot demonstrate the occurrence of a donor.…”

Section: Introductionmentioning

confidence: 99%

On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H₂

Zhou

et al. 2010

J. Phys. D: Appl. Phys.

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The treatment of an Ar + H2 plasma generated by a low-frequency inductively coupled plasma system at 500 °C introduces an n-type region (of average electron concentration ∼1015 cm−3) on a Czochralski p-type substrate, forming a deep p–n junction. Examination by an electron microscope shows that the plasma treatment produces uniform nanocones on the surface and some defects, such as dislocations and platelets, in the subsurface. All these observed results are hydrogen-related. The conductivity type conversion is due to the formation of hydrogen-enhanced oxygen-related thermal donors (OTDs) as well as hydrogen-incorporated shallow thermal donors. The OTD-related signals are directly observed in the infrared absorption spectra. Both donors are annihilated after annealing at 550 °C for 10 min, resulting in conductivity recovery from n-type to original p-type. The electrical properties of the as-formed junction are investigated using current versus voltage (I–V), capacitance versus voltage (C–V) and Hall effect measurements. On this basis, the junction depth, carrier profile and hydrogen diffusion behaviour are studied. Moreover, a clear photovoltaic effect of the junction has been observed through the Suns-Voc and illuminated I–V tests.

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Non-equilibrium impurity redistribution in Si

Cited by 12 publications

References 4 publications

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Fianite in Photonics

On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H₂

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Non-equilibrium impurity redistribution in Si

Cited by 12 publications

References 4 publications

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Fianite in Photonics

On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H2

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Product

Resources

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On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H₂