2011
DOI: 10.1016/j.optmat.2011.01.018
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Non-linear optical and electrical properties of ZnO doped Ni Thin Films obtained using spray ultrasonic technique

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Cited by 94 publications
(20 citation statements)
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“…7 shows the variation of (ahn) 2 versus (hn) for Ni doped ZnO thin films. A straight line portion is observed, indicating the existence of a direct band gap of Ni doped ZnO thin films in agreement with the literature [31]. It can be seen also that the value of E g varies with Ni doping.…”
Section: Optical Studysupporting
confidence: 90%
“…7 shows the variation of (ahn) 2 versus (hn) for Ni doped ZnO thin films. A straight line portion is observed, indicating the existence of a direct band gap of Ni doped ZnO thin films in agreement with the literature [31]. It can be seen also that the value of E g varies with Ni doping.…”
Section: Optical Studysupporting
confidence: 90%
“…It is an n-type semiconductor [3] that belongs to the chalcogenide family, which is characterized by a high absorption coefficient and a wide band gap energy E g =2.42 eV [4]. It has various industrial applications, such as bulk material [5], nanostructures as nanowires [6], and transparent conducting semiconductor [7][8][9]. Besides, pure and doped CdS have gathered considerable interest in electronic [10] and non-linear optoelectronic devices [11].…”
Section: Introductionmentioning
confidence: 99%
“…This paper presents characterization of the structure of ZnO thin film using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), and studies of the linear optical properties using classic and time-resolved photoluminescence (PL and TRPL, respectively) as well as investigations of the nonlinear optical properties using Third Harmonic Generation (THG) method. The fact that the NLO response can be adjusted in order to meet the needs of specific applications is very promising in the direction of utilizing these materials for photonic applications [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%