Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

Abstract

The non-linearity and radio-frequency (RF) intermodulation distortion in ultrascale graphene-nanoribbon-field-effect-transistor (GNRFETs) is reported. The important figure of merits related to the non-linearity and the RF distortion in terms of transconductance, high-order harmonics, VIP2, VIP3, IIP3, IMD3 and 1-dB compression point have been explored to evaluate the power of ultrascale GNRFET device in RF high-performance applications. Also, the RF important parameters in the cases of total capacitance, cut-off frequency, and transconductance frequency product have been monitored. This paper presents a useful manual to improve the GNRFET RF performance while maintaining high reliability. The influence of the structural parameters of GNRFET device, such as the gate length, gate oxide thickness, gate oxide material, and GNR index on the RF parameters and nonlinearity/RF intermodulation distortion have been investigated in order to determine the best setup for the ultrascale GNRFET device applicable in RF applications. The paper benefits from the numerical approach governed by a nonequilibrium-greenfunction coupled by a three-dimensional Poisson equation in a self-consistent manner. Also, because the ultrascale GNRFET (gate length smaller than 7.5 nm) has been analyzed, the position-energy dependent effective mass model is considered for more accurate simulation.

Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure

“…Recent studies have delved into assessing the analog/RF performance of graphene nanoribbon field-effect transistors, exploring the impact of diverse factors on these parameters. These factors encompass distinct dielectrics 27 , gate length, gate oxide material, and gate oxide thickness 28 , along with considerations of the underlap effect 29 and vacancy defects 30 . Another avenue to enhance analog/RF performance involves the adoption of triple-material gates 31 .…”