We study Rabi oscillations detected in the coherent optical response from various exciton complexes in a 20 nm-thick CdTe/(Cd,Mg)Te quantum well using time-resolved photon echoes. In order to evaluate the role of exciton localization and inhomogeneous broadening we use selective excitation with spectrally narrow ps-pulses. We demonstrate that the transient profile of the photon echo from the localized trion (X − ) and the donor-bound exciton (D 0 X) transitions strongly depends on the strength of the first pulse. It acquires a non-Gaussian shape and experiences significant advancement for pulse areas larger than π due to non-negligible inhomogeneity-induced dephasing of the oscillators during the optical excitation. Next, we observe that an increase of the area of either the first (excitation) or the second (rephasing) pulse leads to a significant damping of the photon echo signal, which is strongest for the neutral excitons and less pronounced for the donor-bound exciton complex (D 0 X). The measurements are analyzed using a theoretical model based on the optical Bloch equations which accounts for the inhomogeneity of optical transitions in order to reproduce the complex shape of the photon echo transients. In addition, the spreading of Rabi frequencies within the ensemble due to the spatial variation of the intensity of the focused Gaussian beams and excitation-induced dephasing are required to explain the fading and damping of Rabi oscillations. By analyzing the results of the simulation for the X − and the D 0 X complexes we are able to establish a correlation between the degree of localization and the transition dipole moments determined as µ(X − )=73 D and µ(D 0 X)=58 D.
PACS numbers:Introduction. Coherent control of excitonic states in semiconductor nanostructures under resonant excitation with intense optical pulses attracts a lot of attention in relation with possible applications in quantum information [1]. These ideas exploit coherent rotations of the Bloch vector in the photoexcited two-level system (TLS), which depends on the area of the exciting pulse via Rabi oscillations [2][3][4]. Since stronger localization of excitons is in favor of longer decoherence times, most of the studies of coherent control have concentrated on quantum dots (QD) [3,5,6]. However, the strong localization in QDs is accompanied by large variations in QD size, shape, and composition which consequently leads to the large inhomogeneous broadening of the optical transitions when an ensemble of emitters is used. Therefore, most Rabi oscillation studies were performed on single QDs [7-10].In semiconductor quantum well (QW) structures the inhomogeneous broadening of the optical transitions is significantly smaller as compared to QD systems, i.e. it is possible to selectively address different exciton complexes, such as free and localized excitons, localized charged excitons (trions, X − ), and donor-bound excitons (D 0 X). Therefore, QW structures can be considered as a model system for the investigation of Rabi oscillations and t...