Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold

Mirigliano, Matteo; Borghi, Francesca; Podestà, Alessandro; Antidormi, Aleandro; Colombo, Luciano; Milani, P.

doi:10.1039/c9na00256a

Cited by 60 publications

(129 citation statements)

References 57 publications

(95 reference statements)

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“…dρ/dT > 0. Figure 5a shows that cluster-assembled gold films have a negative TCR, in particular near RT, the oscillation around zero at lower temperatures can be ascribed to the presence of switching events of amplitude smaller than the resistance temperature variations 22,23 .…”

Section: Resultsmentioning

confidence: 99%

“…In order to provide further elements to highlight the role of the high density of grain boundaries and defects in determining the conduction regime, we have characterized the behavior of films under constant bias in the time. Since cluster-assembled gold films exhibit resistive switching (RS) phenomena [21][22][23] , the evolution of the RS activity with temperature can provide useful elements.…”

Section: Resultsmentioning

confidence: 99%

“…We characterized continuous films with an average thickness ranging from 15 to 30 nm, and resistance, before switching activation [21][22][23] , varying from 80 Ω to 1000 Ω. This range belongs to strong-coupling regime where ohmic behavior and positive TCR are usually observed in granular films 3,11,28 .…”

Section: Experimental Methods and Characterizationmentioning

confidence: 99%

“…Recently we showed that granular systems in strong-coupling regime consisting of continuous cluster-assembled gold films produced by the assembling of unprotected clusters, also show resistive switching 22 , 23 . Their structure is characterized by the random stacking of differently shaped crystalline clusters directly connected by junctions of different cross sections with an extremely high number of defects and grain boundaries 22 , 23 .…”

Section: Introductionmentioning

confidence: 99%

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Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

Mirigliano

Radice

Falqui

et al. 2020

Sci Rep

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We report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Experimental Methods and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

Mirigliano

Radice

Falqui

et al. 2020

Sci Rep

Self Cite

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“…Each ionogel sample was then provided with a couple of 150 nm-thick cluster-assembled Au electrodes (in a sandwich geometry) by means of supersonic cluster beam deposition (SCBD) [ 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ]. Cluster-assembled Au electrodes have a granular structure characterized by a high electrical conductivity typical of gold and a low density of about 8.0 g/cm 3 [ 56 ]. It was already demonstrated that supersonically accelerated Au clusters can partially penetrate and implant into the surface of soft polymeric substrates, leading to a high interfacial area and robust adhesion [ 52 , 57 ], providing an efficient and stable electrolytic double layer at the electrode-ionogel interface.…”

Section: Resultsmentioning

confidence: 99%

Eco-Friendly Supercapacitors Based on Biodegradable Poly(3-Hydroxy-Butyrate) and Ionic Liquids

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The interest for biodegradable electronic devices is rapidly increasing for application in the field of wearable electronics, precision agriculture, biomedicine, and environmental monitoring. Energy storage devices integrated on polymeric substrates are of particular interest to enable the large-scale on field use of complex devices. This work presents a novel class of eco-friendly supercapacitors based on biodegradable poly(3-hydroxybutyrrate) PHB, ionic liquids, and cluster-assembled gold electrodes. By electrochemical characterization, we demonstrate the possibility of tuning the supercapacitor energetic performance according to the type and amount of the ionic liquid employed. Our devices based on hydrophobic plastic materials are stable under cyclic operation and resistant to moisture exposure.

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Functional Materials for Memristor‐Based Reservoir Computing: Dynamics and Applications

Zhang

Qin

Zhang

et al. 2023

Adv Funct Materials

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The booming development of artificial intelligence (AI) requires faster physical processing units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged as an alternative brain‐inspired framework for fast learning with low training cost, since only the weights associated with the output layers should be trained. Physical RC becomes one of the leading paradigms for computation using high‐dimensional, nonlinear, dynamic substrates. Among them, memristor appears to be a simple, adaptable, and efficient framework for constructing physical RC since they exhibit nonlinear features and memory behavior, while memristor‐implemented artificial neural networks display increasing popularity towards neuromorphic computing. In this review, the memristor‐implemented RC systems from the following aspects: architectures, materials, and applications are summarized. It starts with an introduction to the RC structures that can be simulated with memristor blocks. Specific interest then focuses on the dynamic memory behaviors of memristors based on various material systems, optimizing the understanding of the relationship between the relaxation behaviors and materials, which provides guidance and references for building RC systems coped with on‐demand application scenarios. Furthermore, recent advances in the application of memristor‐based physical RC systems are surveyed. In the end, the further prospects of memristor‐implemented RC system in a material view are envisaged.

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Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold

Abstract: Networks based on nanoscale resistive switching junctions are considered promising for the fabrication of neuromorphic computing architectures.

Cited by 60 publications

References 57 publications

Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

Eco-Friendly Supercapacitors Based on Biodegradable Poly(3-Hydroxy-Butyrate) and Ionic Liquids

Functional Materials for Memristor‐Based Reservoir Computing: Dynamics and Applications

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