Non-ohmic electrical conductivity of β-rhombohedral boron in high electric fields

Werheit, H.; Moldenhauer, Alexander

doi:10.1016/j.jssc.2003.04.007

Cited by 6 publications

(3 citation statements)

References 23 publications

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“…Indeed, correlations between specific defects and states in the band gap are largely missing. The band scheme in figure 19 is based on consistent experimental results like optical absorption [42,47,49], electrical conductivity [39,40], photo-absorption [64], photo-conductivity [65][66][67], drift experiments [68,69], luminescence [59,60], includes gap states evoked by carbon doping as well [41] and is advanced by electronic transitions gained in the present work (red arrows).…”

Section: Discussionsupporting

confidence: 57%

Influence of dopants, particularly carbon, onβ-rhombohedral boron

Werheit¹,

Flachbart²,

Pristáš³

et al. 2017

Semicond. Sci. Technol.

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Due to the high affinity of carbon to boron, the preparation of carbon-free boron is problematic. Even high-purity (6 N) β-rhombohedral boron contains 30-60 ppm of C. Hence, carbon affects the boron physical properties published so far more or less significantly. We studied well-defined carbon-doped boron samples based on pure starting material carefully annealed with up to about 1% C, thus assuring homogeneity. We present and discuss their electrical conductivity, optical absorption, luminescence and phonon spectra. Earlier attempts of other authors to determine the conductivity of C-doped boron are revised. Our results allow estimating the effects of oxygen and iron doping on the electrical conductivity using results taken from literature. Discontinuities at low T impair the electronic properties.

show abstract

Section: Discussionsupporting

confidence: 57%

Influence of dopants, particularly carbon, onβ-rhombohedral boron

Werheit¹,

Flachbart²,

Pristáš³

et al. 2017

Semicond. Sci. Technol.

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show abstract

“…4(a) shows the logarithm of the resistivity plotted versus T À0:25 . Many of the boron-rich borides have been found [17,18] to follow the conductivity mechanism of Mott's variable range hopping mechanism for threedimensional systems [19,20] where the resistivity r follows:…”

Section: Resistivity and Thermopowermentioning

confidence: 99%

Thermoelectric properties of homologous p- and n-type boron-rich borides

Mori

Nishimura

2006

Journal of Solid State Chemistry

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“…The abundant electric property, for example switching effect, variable-range hopping in the low-field and non-ohmic electrical conductivity in high electric fields, of β-boron is extensively investigated at ambient pressure [6][7][8][9]. But many previous studies of boron at high pressure have concentrated on structural characterization [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Electrical conductivity measurements of β-boron under high pressure and temperature

Zhang

Chen

et al. 2007

J. Phys.: Condens. Matter

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Using a microcircuit fabricated on a diamond anvil cell, we carried out in situ conductivity measurements on β-boron at pressures up to 28 GPa. The electrical conductivity of the sample increases with increasing pressure, but it does not return to original state when the pressure returns to ambient. As the conductivity gradually increases within a temperature region from 293 to 473 K, two significant different conduction processes are observed. A possible reason for this result is proposed based on the valence band structure. In addition, by laser heating, our experimental result indicates that β-boron still shows the transport behavior of a semiconductor.

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Non-ohmic electrical conductivity of β-rhombohedral boron in high electric fields

Cited by 6 publications

References 23 publications

Influence of dopants, particularly carbon, onβ-rhombohedral boron

Influence of dopants, particularly carbon, onβ-rhombohedral boron

Thermoelectric properties of homologous p- and n-type boron-rich borides

Electrical conductivity measurements of β-boron under high pressure and temperature

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