Non-oxidized porous silicon-based power AC switch peripheries

Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoue, Jérôme; Gautier, Gaël

doi:10.1186/1556-276x-7-566

Cited by 10 publications

(2 citation statements)

References 25 publications

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“…Thanks to the unique combination of high specific surface area (induced by the small average pore size) and acceptable mechanical stability, MePSi has been applied in many domains such as energy storage, , drug delivery, or microelectronics . In microelectronics, MePSi is a promising candidate for the electrical insulation of AC-switch peripheries or in radio frequency devices . However, the electrical property of MePSi is not the only parameter to consider when assessing the performances of a device; its thermal conductivity is also very important to determine the heat dissipation and thus limit self-heating-induced device damage .…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical, and Thermophysical Properties of Mesoporous Silicon Layers: Influence of Substrate Characteristics

Melhem¹,

Meneses²,

Andreazza‐Vignolle³

et al. 2017

J. Phys. Chem. C

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In this paper, the structural, optical, and thermal properties of n-type (100), p-type (100), and (111) mesoporous silicon (MePSi) are reported. The mesoporous silicon was prepared by an electrochemical process from the bulk silicon wafer. Depending on the etching depth, analyses show that the porosity of p-type (111) increased by 32 to 40% compared to p-type (100) which, in turn, increased by 22 to 48% compared to n-type (100). The structure morphology and the abundance of Si–O x and Si–H y also depended heavily on the type and crystal orientation of MePSi. The thermal properties of the MePSi layers such as thermal conductivity (κ), volumetric heat capacity (ρC p), and thermal contact resistance (R th) were determined using the pulsed photothermal method. The thermal conductivity of bulk silicon dropped sharply after etching, decreasing by more than 20-fold in the case of n-type (100) and by over 45-fold for p-type (100) and (111). According to the percolation model depending on both porosity and phonon confinement, the drop in thermal conductivity was mainly due to the nanostructure formation after etching. Thermal investigations showed that the volumetric heat capacity (ρC p) followed the barycentric model which depends mainly on the porosity. The thermal contact resistances of MePSi layers were estimated to be in the range of 1 × 10–8 to 1 × 10–7 K·m2·W–1.

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Section: Introductionmentioning

confidence: 99%

Structural, Optical, and Thermophysical Properties of Mesoporous Silicon Layers: Influence of Substrate Characteristics

Melhem¹,

Meneses²,

Andreazza‐Vignolle³

et al. 2017

J. Phys. Chem. C

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“…All power AC switch devices, and TRIACs in particular, are manufactured through three main technologies: double mesa, top glass, and planar (19). Whatever the technology is, the TRIAC architecture remains unchanged.…”

Section: Power Ac Switchesmentioning

confidence: 99%

Porous Silicon in Microelectronics: From Academic Studies to Industry

Gautier

Defforge

Desplobain³

et al. 2015

ECS Trans.

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The evolution of porous silicon (PSi) from its early studies in the late 70’s toward its industrial application in microelectronics is described in this article. The way this material can be integrated now in many devices at a wafer level is shown in this paper through examples of prototypes that include PSi in their fabrication process. For instance, realization of devices on large area wafers in the field of RF passive components, energy micro-sources or porous flexible membranes are described. In this paper, we also show recent advances in the field of PSi etching and integration at an industrial level. In particular, we put an emphasis on reproducibility and homogeneity issues, on the wafer warp management using different annealing procedures.

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